參數(shù)資料
型號(hào)： IXLF19N250A
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： High Voltage IGBT
中文描述： 19 A, 2500 V, N-CHANNEL IGBT
封裝： ISOPLUS I4-PAC-3
文件頁數(shù)： 1/4頁
文件大?。?/td> 76K
代理商： IXLF19N250A
2004 IXYS All rights reserved
1 - 4
4
IXLF 19N250A
IXYS reserves the right to change limits, test conditions and dimensions.
High Voltage IGBT
in High Voltage
ISOPLUS i4-PAC
TM
Features
High Voltage IGBT
- substitute for high voltage MOSFETs
with significantly lower voltage drop
and comparable switching speed
- substitute for high voltage thyristors
with voltage control of turn on & turn off
- substitute for electromechanical trigger
and discharge relays
ISOPLUS i4-PAC
TM
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
- application friendly pinout
- high reliability
- industry standard outline
- UL registered
E
72873
Applications
switched mode power supplies
DC-DC converters
resonant converters
laser generators, x ray generators
discharge circuits
I
C25
V
CES
= 2500 V
V
CE(sat)
= 3.2 V
t
f
= 250 ns
= 32 A
5
1
2
1
5
2
IGBT
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C
2500
V
V
GES
±
20
V
I
C25
I
C90
T
C
= 25°C
T
C
= 90°C
32
19
A
A
I
CM
V
CEK
V
=
±
15 V; R
= 47
; T
= 125°C
RBSOA, Clamped inductive load; L = 100 μH
70
1200
A
V
P
tot
T
C
= 25°C
250
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 19 A; V
GE
= 15 V; T
VJ
= 25°C
3.2
4.7
3.9
V
V
T
VJ
= 125°C
V
GE(th)
I
C
= 1 mA; V
GE
= V
CE
5
8
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
0.15
mA
mA
0.2
I
GES
V
CE
= 0 V; V
GE
=
±
20 V
500
nA
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
100
50
600
250
15
30
ns
ns
ns
ns
mJ
mJ
C
ies
C
oes
C
res
Q
Gon
2.28
103
43
nF
pF
pF
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 1500V; V
GE
= 15 V; I
C
= 19 A
142
nC
R
thJC
0.5 K/W
Inductive load, T
= 125°C
V
CE
= 1500 V; I
C
= 19 A
V
GE
= ±15 V; R
G
= 47
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