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參數(shù)資料
| 型號(hào)： | IXSH10N60A |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Speed IGBT - Short Circuit SOA Capability |
| 中文描述： | 20 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 217K |
| 代理商： | IXSH10N60A |
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXSH10N60
IXSH10N60A
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
e
P
TO-247 AD Outline
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ. max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
2
S
I
C(on)
V
GE
= 15 V, V
CE
= 10 V
50
A
C
ies
C
oes
C
res
750
125
30
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
Q
g
Q
ge
Q
gc
40
12
20
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
80
t
d(on)
t
ri
t
d(off)
t
fi
100
200
250
175
720
0.75
1.2
ns
ns
ns
ns
ns
mJ
mJ
750
410
10N60A
10N60
10N60A
10N60
E
off
1.2
1.9
Note 1
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
100
200
1.0
300
400
1.5
ns
ns
mJ
ns
ns
mJ
10N60AU1
10N60AU1
Note 1
R
thJC
R
thCK
1.25
K/W
K/W
0.25
Inductive load, T
= 25
°
C
I
= I
, V
= 15 V,
L = 300
μ
H, V
CE
= 0.8 V
CES
,
R
G
= 150
Notes:
1.
Switching times may increase for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or R
G
values.
2.
Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
Inductive load, T
= 125
°
C
I
= I
, V
= 15 V,
L = 300
μ
H, V
CE
= 0.8 V
CES
,
R
G
= 150
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|---|---|
| IXSH10N60B2D1 | 功能描述:IGBT 晶體管 10 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH15N120A | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:IGBT |
| IXSH15N120AU1 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:IGBT with Diode |
| IXSH15N120B | 功能描述:IGBT 晶體管 30 Amps 1200V 3.4 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH15N120BD1 | 功能描述:IGBT 晶體管 30 Amps 1200V 3.4 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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