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參數(shù)資料
| 型號： | IXSH15N120A |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT |
| 中文描述： | 30 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 36K |
| 代理商： | IXSH15N120A |
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXSH15N120A
Data contained herein reflects measurements and characterization data from engineering lots.
Symbol
(T
J
= 25°C unless otherwise specified)
Test Conditions
Characteristic Values
Min Typ.
Max.
TO-247AD (IXSH)
g
fs
I
C
Pulse test, t < 300 μs, duty cycle
< 2 %
= I
C90
, V
CE
= 10 V,
6
7
S
I
C(on)
V
GE
= 15V, V
CE
= 10 V
65
A
C
ies
C
oes
C
res
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
1800
160
pF
pF
pF
45
Q
g
Q
ge
Q
gc
I
C
= I
c90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
75
20
35
nC
nC
nC
t
d(on)
t
ri
t
d(off)
t
fi
E
off
Inductive load, T
J
= 25°C
I
C
= I
C90
, V
GE
= 15 V, L = 100μH
R
G
= 82
, VCLAMP = 0.8 V
CES
Note 1
100
200
450
600
5.4
ns
ns
ns
ns
mJ
t
d(on)
t
ri
E
(on)
t
d(off)
t
fi
E
off
Inductive load, T
J
= 125°C
I
C
= I
C90,
V
GE
= 15 V, L = 100μH
R
G
= 82
V
CLAMP
= 0.8 V
CES
Note 1
100
200
1.1
650
900
14.5
ns
ns
mJ
ns
ns
mJ
R
thJC
R
thCK
0.83K/W
0.25
K/W
Notes:
1.) Switching times may increase for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or R
values.
2.) Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXSH15N120BD1 | S Series - Improved SCSOA Capability |
| IXST15N120BD1 | S Series - Improved SCSOA Capability |
| IXSH15N120AU1 | IGBT with Diode |
| IXSH15N120B | High Voltage IGBT(VCES為1200V，VCE(sat)為3.4V的高電壓絕緣柵雙極晶體管) |
| IXSH16N60U1 | Low VCE(sat) IGBT with Diode(VCES為600V，VCE(sat)為1.8V的絕緣柵雙極晶體管(帶二極管）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXSH15N120AU1 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:IGBT with Diode |
| IXSH15N120B | 功能描述:IGBT 晶體管 30 Amps 1200V 3.4 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH15N120BD1 | 功能描述:IGBT 晶體管 30 Amps 1200V 3.4 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH16N60U1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 32A I(C) | TO-247AD |
| IXSH17N100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 17A I(C) | TO-247AD |
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