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參數(shù)資料
| 型號(hào)： | IXSH16N60U1 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Low VCE(sat) IGBT with Diode(VCES為600V，VCE(sat)為1.8V的絕緣柵雙極晶體管(帶二極管）) |
| 中文描述： | 32 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 36K |
| 代理商： | IXSH16N60U1 |
1 - 2
2000 IXYS All rights reserved
98532 (7/98)
Features
Latest generation HDMOS
TM
process
International standard package
Guaranteed Short Circuit SOA
capability
Low V
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Fast fall time for switching speeds
up to 20 kHz
Applications
AC motor speed control
Uninterruptible power supplies (UPS)
Welding
Advantages
High power density
IXSH 16N60U1
Low V
CE(sat)
IGBT
with Diode
Short Circuit SOA Capability
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 150
Clamped inductive load, L = 300 H
32
16
52
A
A
A
I
= 32
@ 0.8 V
CES
A
t
(SCSOA)
V
GE
= 15 V, V
= 360 V, T
J
= 125 C
R
G
= 82
non repetitive
T
C
= 25 C
5
s
P
C
T
J
T
JM
T
stg
Weight
100
W
-55 ... +150
C
C
C
150
-55 ... +150
2
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering for 10s
300
C
260
C
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250 A, V
GE
= 0 V
= 750 A, V
CE
= V
GE
600
3.5
V
V
6.5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
200
A
1
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
1.8
2.3
V
Preliminary data
C (TAB)
GCE
TO-247 AD
IXYS reserves the right to change limits, test conditions, and dimensions.
V
CES
I
C25
V
CE(sat)typ
= 600V
=
16A
=
1.8V
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| IXSH20N60U1 | Low VCE(sat) IGBT with Diode, High Speed IGBT with Diode |
| IXSH20N60AU1 | Low VCE(sat) IGBT with Diode, High Speed IGBT with Diode |
| IXSH24N60AU1 | HiPerFASTTM IGBT with Diode |
| IXSH24N60U1 | HiPerFASTTM IGBT with Diode |
| IXSH24N60 | HiPerFAST IGBT(VCES為600V，VCE(sat)為2.2V的HiPerFAST絕緣柵雙極晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXSH17N100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 17A I(C) | TO-247AD |
| IXSH17N100A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 17A I(C) | TO-247AD |
| IXSH20N60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-247AD |
| IXSH20N60A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-247AD |
| IXSH20N60AU1 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Low VCE(sat) IGBT with Diode, High Speed IGBT with Diode |
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