參數(shù)資料
型號： IXSH24N60AU1
廠商： IXYS CORP
元件分類： IGBT 晶體管
英文描述： HiPerFASTTM IGBT with Diode
中文描述： 48 A, 600 V, N-CHANNEL IGBT, TO-247
封裝： TO-247, 3 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 37K
代理商： IXSH24N60AU1
1 - 2
2000 IXYS All rights reserved
Features
International standard package
JEDEC TO-247 AD
High frequency IGBT and anti-parallel
FRED in one package
2nd generation HDMOS
TM
process
Low V
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Fast Recovery
Epitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Space savings (two devices in one
package)
Suitable for surface mounting
Easy to mount with 1 screw, TO-247
(isolated mounting screw hole)
Reduces assembly time and cost
HiPerFAST
TM
IGBT with Diode
Short Circuit SOA Capability
92820I (7/00)
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C600
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
V
600
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 10
Clamped inductive load, L = 100 H
48
24
96
A
A
A
I
= 48
@ 0.8 V
CES
A
t
(SCSOA)
V
GE
= 15 V, V
= 360 V, T
J
= 125 C,
R
G
= 82 , non-repetitive
T
C
= 25 C
10
s
P
C
T
J
T
JM
T
stg
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
150
W
-55 ... +150
C
C
C
150
-55 ... +150
300
C
260
C
M
d
Weight
Mounting torque, TO-247
1.13/10 Nm/lb.in.
TO-247 AD
6
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 750 A, V
GE
= 0 V
= 1.5 mA, V
CE
= V
GE
600
3.5
V
V
6.5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
500
A
8
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
IXSH 24N60U1
IXSH 24N60AU1
2.2
2.7
V
V
GCE
TO-247 AD
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
V
CES
600 V
600 V
I
C25
48 A
48 A
V
CE(sat)
2.2 V
2.7 V
IXSH 24N60U1
IXSH
24N60AU1
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料
PDF描述
IXSH24N60U1 HiPerFASTTM IGBT with Diode
IXSH24N60 HiPerFAST IGBT(VCES為600V，VCE(sat)為2.2V的HiPerFAST絕緣柵雙極晶體管)
IXSH24N60A HiPerFAST IGBT(VCES為600V，VCE(sat)為2.7V的HiPerFAST絕緣柵雙極晶體管)
IXSH25N100A Low VCE(sat) High Speed IGBT(VCE(sat)為4.0V的高速絕緣柵雙極場效應管)
IXSH25N100 Low VCE(sat) High Speed IGBT(VCE(sat)為3.5V的高速絕緣柵雙極場效應管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXSH24N60AU1S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 48A I(C) | TO-263VAR
IXSH24N60B 功能描述:IGBT 晶體管 48 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXSH24N60BD1 功能描述:IGBT 晶體管 48 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXSH24N60U1 功能描述:IGBT 晶體管 S-SERIE MED SPD IGBT FREEWHEELING 600V48A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXSH24N60U1S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 48A I(C) | TO-263VAR
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