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參數(shù)資料
| 型號(hào)： | IXSH25N100A |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Low VCE(sat) High Speed IGBT(VCE(sat)為4.0V的高速絕緣柵雙極場(chǎng)效應(yīng)管) |
| 中文描述： | 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 102K |
| 代理商： | IXSH25N100A |
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670
IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents:
IXSH 25N100
IXSH 25N100A IXSM 25N100A
IXSM 25N100
TO-247 AD Outline
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
= I
; V
CE
= 10 V,
10
17
S
I
C(on)
V
GE
= 15 V, V
CE
= 10 V
140
A
C
ies
C
oes
C
res
2850
210
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
50
Q
g
Q
ge
Q
gc
112
28
50
130
40
75
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
t
d(on)
t
ri
t
d(off)
t
fi
70
ns
ns
ns
ns
ns
mJ
mJ
580
150
1200
800
25N100
25N100A
25N100
25N100A
E
off
10
8
t
d(on)
t
ri
E
on
t
d(off)
t
fi
70
ns
ns
mJ
ns
ns
ns
mJ
mJ
580
4.2
200
1500
1000
15
11
550
3000
1500
25N100
25N100A
25N100
25N100A
E
off
R
thJC
R
thCK
0.63 K/W
0.25
K/W
TO-204AE Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
1 = Gate
2 = Emitter
Case = Collector
Inductive load, T
J
=
125
°
C
I
= I
, V
GE
= 15 V,
L = 100
μ
H
V
CE
= 0.8 V
CES
,
R
G
= 4.7
Remarks: Switching times
may increase for
V
(Clamp) > 0.8 V
,
higher T
J
or increased R
G
Inductive load, T
J
= 25
°
C
I
C
= I
, V
GE
= 15 V, L = 100
μ
H
V
CE
= 0.8 V
CES
, R
G
= 4.7
Remarks: Switching times
may increase for
V
(Clamp) > 0.8 V
,
higher T
J
or increased R
G
4,835,592 4,881,108 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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| IXSH25N120A | 功能描述:IGBT 晶體管 50 Amps 1200V 4.0 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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| IXSH30N60 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Low VCE(sat) IGBT, High Speed IGBT |
| IXSH30N60A | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Low VCE(sat) IGBT, High Speed IGBT |
| IXSH30N60AU1 | 功能描述:IGBT 晶體管 30 Amps 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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