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參數(shù)資料
| 型號： | IXSH30N60 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Low VCE(sat) High Speed IGBT(VCE(sat)為2.5V的高速絕緣柵雙極場效應(yīng)管) |
| 中文描述： | 50 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 241K |
| 代理商： | IXSH30N60 |
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXSH 30N60
IXSH 30N60A
IXSM 30N60
IXSM 30N60A
TO-247 AD Outline
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
= I
; V
CE
= 10 V,
7
13
S
I
C(on)
V
GE
= 15 V, V
CE
= 10 V
100
A
C
ies
C
oes
C
res
2760
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
240
pF
51
pF
Q
g
Q
ge
Q
gc
110
150
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
34
45
nC
47
63
nC
t
d(on)
t
ri
t
d(off)
t
fi
60
ns
130
ns
400
ns
30N60
30N60A
400
200
ns
ns
E
off
30N60
30N60A
5.0
2.5
mJ
mJ
t
d(on)
t
ri
E
on
t
d(off)
60
ns
130
ns
1.0
mJ
30N60
30N60A
540
340
1000
525
ns
ns
t
fi
30N60
30N60A
600
340
1500
700
ns
ns
E
off
30N60
30N60A
12
mJ
mJ
6
R
thJC
R
thCK
0.63 K/W
0.25
K/W
IXSH 30N60 and IXSH 30N60A characteristic curves are located on the
IXSH 30N60U1 and IXSH 30N60AU1 data sheets.
TO-204AE Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
1 = Gate
2 = Emitter
Case = Collector
Inductive load, T
J
= 25
°
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
μ
H
V
CE
= 0.8 V
CES
, R
G
= 4.7
Remarks: Switching times
may increase for
V
(Clamp) > 0.8 V
,
higher T
J
or increased R
G
Inductive load, T
J
= 125
°
C
I
= I
, V
GE
= 15 V,
L = 100
μ
H
V
CE
= 0.8 V
CES
,
R
G
= 4.7
Remarks: Switching times
may increase for
V
(Clamp) > 0.8 V
,
higher T
J
or increased R
G
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXSH30N60A | Low VCE(sat) High Speed IGBT(VCE(sat)為3.0V的高速絕緣柵雙極場效應(yīng)管) |
| IXSM30N60 | Low VCE(sat) IGBT, High Speed IGBT |
| IXSM30N60A | Low VCE(sat) IGBT, High Speed IGBT |
| IXSH35N100A | High speed IGBT |
| IXSM35N100A | High speed IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXSH30N60A | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Low VCE(sat) IGBT, High Speed IGBT |
| IXSH30N60AU1 | 功能描述:IGBT 晶體管 30 Amps 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH30N60B | 功能描述:IGBT 晶體管 55 Amps 600V 2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH30N60B2D1 | 功能描述:IGBT 晶體管 30 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH30N60BD1 | 功能描述:IGBT 晶體管 55 Amps 600V 2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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