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參數(shù)資料
| 型號： | IXSH35N120B |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT |
| 中文描述： | 70 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 82K |
| 代理商： | IXSH35N120B |
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
Note 2
= I
C90
; V
CE
= 10 V,
16
23
S
C
ies
C
oes
C
res
3600
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
260
pF
75
pF
Q
g
Q
ge
Q
gc
120
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
33
nC
49
nC
t
d(on)
t
ri
t
d(off)
t
fi
E
off
36
ns
27
ns
160
180
300
300
ns
ns
5
9
mJ
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
38
ns
29
ns
2.5
mJ
240
340
ns
ns
9
mJ
R
thJC
R
thCK
0.42 K/W
(TO-247)
0.25
K/W
Inductive load, T
J
= 125
°
C
I
C
= I
C90
, V
GE
= 15 V
R
G
= 5
,
V
CE
= 0.8 V
CES
Note 3
TO-247 AD Outline (IXSH)
Inductive load, T
J
= 25
°
C
I
C
= I
C90
, V
GE
= 15 V
R
G
= 5
V
CE
= 0.8 V
CES
Note 3
Notes:1.
Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2.
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
3.
Switching times may increase for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
.
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-268 Outline (IXST)
IXSH 35N120B
IXST 35N120B
Dim.
Millimeter
Min.
4.9
2.7
.02
1.15
1.9
.4
13.80
15.85
13.3
e 5.45 BSC .215 BSC
H
18.70
19.10
L
2.40
2.70
L1
1.20
1.40
Inches
Min.
.193
.106
.001
.045
.75
.016
.543
.624
.524
Max.
5.1
2.9
.25
1.45
2.1
.65
14.00
16.05
13.6
Max.
.201
.114
.010
.057
.83
.026
.551
.632
.535
A
A
1
A
2
b
b
2
C
D
E
E
1
.736
.094
.047
.752
.106
.055
L2
L3 0.25 BSC .010 BSC
L4
3.80
4.10
1.00
1.15
.039
.045
.150
.161
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXSH35N135A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.35KV V(BR)CES | 70A I(C) | TO-247AD |
| IXSH35N140A | 功能描述:IGBT 晶體管 70 Amps 1400V 4 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH40N60 | 制造商:IXYS Corporation 功能描述:Transistor IGBT N-Ch 600V 75A TO247AD |
| IXSH40N60A | 功能描述:IGBT 晶體管 HIGH SPEED IGBT 600V, 40A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH40N60B | 功能描述:IGBT 晶體管 75 Amps 600V 2.2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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