參數(shù)資料
型號(hào): IXSM25N100
廠商: IXYS CORP
元件分類: 功率晶體管
英文描述: Low VCE(sat) IGBT, High Speed IGBT
中文描述: 50 A, 1000 V, N-CHANNEL IGBT, TO-204AE
文件頁(yè)數(shù): 4/6頁(yè)
文件大小: 102K
代理商: IXSM25N100
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670
IXSH 25N100
IXSH 25N100A IXSM 25N100A
IXSM 25N100
Pulse Width - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
10
Z
t
0.001
0.010
0.100
1.000
Single Pulse
D = Duty Cycle
D=0.2
D=0.1
V
CE
- Volts
0
200
400
600
800
1000
I
C
0.01
0.1
1
10
100
Q
G
- nanocoulombs
0
25
50
75
100
125
150
V
G
0
3
6
9
12
15
R
G
- Ohms
0
10 20
30
40
50 60
70
80
90 100
t
f
0
300
600
900
1200
1500
E
o
0
1
2
3
4
5
6
7
8
9
10
t
fi
E
off
I
C
- Amperes
10
15
20
25
30
35
40
45
50
E
o
0
2
4
6
8
10
12
14
16
18
20
t
f
0
300
600
900
1200
1500
E
off
t
fi
T
J
= 125°C
R
G
= 10
T
J
= 125°C
I
C
= 25A
V
CE
= 500V
I
C
= 25A
T
J
= 125°C
R
G
= 4.7
dV/dt < 6V/ns
D=0.01
D=0.5
D=0.05
D=0.02
Fig.11 Transient Thermal Impedance
Fig.9 Gate Charge Characteristic Curve
Fig.10
Turn-Off Safe Operating Area
Fig.7 Turn-Off Energy per Pulse and
Fall Time on Collector Current
Fig.8 Dependence of Turn-Off Energy
Per Pulse and Fall Time on R
G
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