參數(shù)資料
型號： IXSN55N120
廠商： IXYS Corporation
英文描述： High Voltage IGBT
中文描述： 高壓IGBT
文件頁數(shù)： 1/2頁
文件大?。?/td> 71K
代理商： IXSN55N120
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
1200
1200
V
A
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 22
Clamped inductive load, L = 30 H
110
55
160
A
A
A
I
= 110
@ 0.8 V
CES
A
t
(SCSOA)
V
GE
= 15 V, V
= 0.6 V
, T
J
= 125 C
R
G
= 22 , non-repetitive
T
C
= 25 C
50/60 Hz
I
ISOL
1 mA
10
s
P
C
V
ISOL
IGBT
500
W
t = 1 min
t = 1 s
2500
3000
V~
V~
T
J
T
JM
T
stg
-55 ... +150
C
C
C
150
-55 ... +150
M
d
Mounting torque
Terminal connection torque (M4)
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
Weight
30
g
High Voltage IGBT
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
Min.
Typ.
Max.
BV
CES
V
GE(th)
I
CES
I
C
I
C
V
CE
= 0.8 V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
= 20 V
I
C
= I
C90
, V
GE
= 15 V
= 6 mA, V
GE
= 0 V
= 8 mA, V
CE
= V
GE
1200
V
V
4
8
T
J
= 25 C
T
J
= 125 C
1
mA
mA
2.5
I
GES
V
CE(sat)
200
nA
4
V
3
2
4
95594B(6/97)
Preliminary Data
miniBLOC, SOT-227 B
1
2
4
3
1 = Emitter
2 = Gate
3 = Collector
4 = Emitter
Either Emitter terminal can be used as Main or
Kelvin Emitter
Features
International standard package
miniBLOC
Aluminium-nitride isolation
- high power dissipation
Isolation voltage 3000 V~
UL registered E 153432
Low V
- for minimum on-state conduction
losses
Low collector-to-case capacitance
(<100 pF)
- reduces RFI
Low package inductance (< 10 nH)
- easy to drive and to protect
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Space savings
Easy to mount with 2 screws
High power density
IXSN 55N120A
Short Circuit SOA Capability
IXYS reserves the right to change limits, test conditions, and dimensions.
V
CES
I
C25
V
CE(sat)
=
= 1200 V
=
110 A
4 V
相關(guān)PDF資料
PDF描述
IXSN55N120A High Voltage IGBT
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXSN55N120A 功能描述:IGBT 晶體管 80 Amps 1200V 4 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXSN55N120AU1 功能描述:IGBT 晶體管 110 Amps 1200V 4 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXSN55N120U1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 83A I(C) | SOT-227B
IXSN62N60AU1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 90A I(C) | SOT-227B
IXSN62N60U1 功能描述:IGBT 晶體管 90 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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