參數(shù)資料
型號(hào)： IXSN80N60BD1
廠商： IXYS CORP
元件分類： IGBT 晶體管
英文描述： IGBT with Diode Short Circuit SOA Capability
中文描述： 160 A, 600 V, N-CHANNEL IGBT
封裝： MINIBLOC-4
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 72K
代理商： IXSN80N60BD1
2002 IXYS All rights reserved
G
E
E
C
98890 (1/2)
miniBLOC, SOT-227 B
E153432
F eatures
International standard package
miniBLOC (ISOTOP) compatible
Aluminium-nitride isolation
- high power dissipation
Isolation voltage 3000 V~
UL registered E 153432
Low V
- for minimum on-state conduction
losses
Fast Recovery
Epitaxial Diode
- short t
and I
Low collector-to-case capacitance
(< 60 pF)
- reduced RFI
Low package inductance (< 10 nH)
- easy to drive and to protect
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Space savings
Easy to mount with 2 screws
High power density
E = Emitter ,
G = Gate,
C = Collector
E = Emitter
Either Emitter terminal can be used as
Main or Kelvin Emitter
IGBT with Diode
Short Circuit SOA Capability
IXSN 80N60BD1
V
CES
I
C25
V
CE(sat)
= 600 V
= 160 A
= 2.5 V
S ymbol
Test Conditions
Maximum R atings
V
C E S
V
C G R
V
G E S
V
G E M
I
C 25
I
C 90
I
C M
S S OA
(R BS OA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
Continuous
Transient
600
600
V
A
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
G
= 5
Clamped inductive load
160
80
300
A
A
A
I
= 160
@ 0.8 V
CES
A
t
(S C S OA)
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125
°
C
R
G
= 22
, non repetitive
T
C
= 25
°
C
50/60 Hz
I
ISOL
≤
1 mA
10
μ
s
P
C
V
IS OL
420
W
t = 1 min
t = 1 s
2500
3000
V~
V~
T
J
T
T
M
d
Weight
-55 ... +150
°
C
°
C
°
C
J M
150
s tg
-55 ... +150
Mounting torque
0.4/6 Nm/lb.in.
30
g
C
E
E
G
S ymbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
V
G E (th)
C E S
I
C
I
C
= 500
μ
A, V
GE
= 0 V
= 8 mA, V
CE
= V
GE
600
V
V
4
8
I
C E S
V
CE
= V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
200
μ
A
mA
2
I
G E S
V
CE
= 0 V, V
GE
=
±
20 V
±
200
nA
V
C E (s at)
I
C
= I
C90
, V
GE
= 15 V
2.5
V
IXYS reserves the right to change limits, test conditions and dimensions.
Advance Technical Information
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