參數(shù)資料
型號(hào)： IXSX50N60AU1
廠商： IXYS CORP
元件分類(lèi)： 功率晶體管
英文描述： IGBT with Diode Combi Pack - Short Circuit SOA Capability
中文描述： 75 A, 600 V, N-CHANNEL IGBT
封裝： PLUS247, 3 PIN
文件頁(yè)數(shù)： 1/5頁(yè)
文件大小： 138K
代理商： IXSX50N60AU1
1997 IXYS All rights reserved
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
±
20
±
30
V
V
T
C
= 25
°
C, limited by leads
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
= 22
Clamped inductive load, L = 30
μ
H
75
50
A
A
A
200
I
= 100
@ 0.8 V
CES
A
t
(SCSOA)
V
GE
= 15 V, V
= 360 V, T
J
= 125
°
C
R
G
= 22
,
non repetitive
T
C
= 25
°
C
10
μ
s
P
C
T
J
T
JM
T
stg
Weight
300
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
6
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
V
CES
I
C25
V
CE(sat)
= 600 V
= 75 A
= 2.7 V
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 3 mA, V
GE
= 0 V
= 4 mA, V
CE
= V
GE
600
V
V
4
8
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
750
15
μ
A
mA
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.7
V
Features
l
Hole-less TO-247 package for clip
mounting
l
High current rating
l
Guaranteed Short Circuit SOA
capability
l
High frequency IGBT and anti-
parallel FRED in one package
l
Low V
- for minimum on-state conduction
losses
l
MOS Gate turn-on
- drive simplicity
l
Fast Recovery
Epitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
l
Space savings (two devices in one
package)
l
High power density
97512 (5/97)
TO-247 Hole-less
(50N60AU1)
G
C
E
C (TAB)
E
G
C (TAB)
TO-247 Hole-less SMD
(50N60AU1S)
IXSX50N60AU1
IXSX50N60AU1S
IGBT with Diode
Combi Pack
Short Circuit SOA Capability
Preliminary data
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXSX50N60AU1S 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:IGBT with Diode Combi Pack - Short Circuit SOA Capability
IXSX50N60BD1 功能描述:IGBT 晶體管 75 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXSX50N60BU1 功能描述:IGBT 晶體管 75 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXSX80N60B 功能描述:IGBT 晶體管 80 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXT-1-1N100S1 功能描述:MOSFET 1.5 Amps 1000V 11 Ohms Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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