參數資料
型號： IXTA1N80
廠商： IXYS CORP
元件分類： JFETs
英文描述： High Voltage MOSFET
中文描述： 0.75 A, 800 V, 11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： TO-263AB, 3 PIN
文件頁數： 1/2頁
文件大?。?/td> 68K
代理商： IXTA1N80
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
800
800
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
750
mA
3
A
I
AR
E
AR
E
AS
dv/dt
1.0
A
T
C
= 25
°
C
T
C
= 25
°
C
I
S
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
T
J
≤
150
°
C, R
G
= 47
T
C
= 25
°
C
5
mJ
mJ
100
3
V/ns
P
D
T
J
T
JM
T
stg
M
d
Weight
40
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque
1.13/10 Nm/lb.in.
TO-220 4
TO-252 0.8
TO-263 3
g
g
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
High Voltage MOSFET
G = Gate,
S = Source,
D = Drain,
TAB = Drain
D (TAB)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 25
μ
A
800
2.5
V
V
4.5
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
25
μ
A
μ
A
500
R
DS(on)
V
= 10 V, I
D
= 500 mA
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
9.5
11
Features
!
International standard packages
!
High voltage, Low R
DS (on)
HDMOS
TM
process
!
Rugged polysilicon gate cell structure
!
Fast switching times
Applications
!
Switch-mode and resonant-mode
power supplies
!
Flyback inverters
!
DC choppers
!
High frequency matching
Advantages
!
Space savings
!
High power density
DS98822C(11/03)
GDS
TO-220AB (IXTP)
2003 IXYS All rights reserved
G
S
TO-263 AA (IXTA)
D (TAB)
N-Channel Enhancement Mode
Avalanche Energy Rated
IXTA 1N80
IXTP 1N80
IXTY 1N80
V
DSS
I
D25
R
DS(on)
= 800
= 750 m
A
= 11
V
Preliminary Data
TO-252 AA (IXTY)
G
S
D (TAB)
相關PDF資料
PDF描述
IXTP1N80 High Voltage MOSFET
IXTY1N80 High Voltage MOSFET
IXTA3N120 High Voltage Power MOSFETs
IXTA3N110 High Voltage Power MOSFETs
IXTA3N50P PolarHV Power MOSFET
相關代理商/技術參數
參數描述
IXTA1R4N100P 功能描述:MOSFET 1.4 Amps 1000V 11 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTA1R4N100PTRL 制造商:IXYS Integrated Circuits Division 功能描述:
IXTA1R4N120P 功能描述:MOSFET 1.4 Amps 1200V 15 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTA1R6N100D2 功能描述:MOSFET N-CH MOSFETS (D2) 1000V 800MA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTA1R6N50D2 功能描述:MOSFET N-CH MOSFETS (D2) 500V 1.6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數量 廠商 批號 封裝
添加更多采購

我的聯系方式

*
*
*