參數(shù)資料
型號(hào)： IXTA8N50P
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： PolarHV Power MOSFET N-Channel Enhancement Mode Avalanche Rated
中文描述： 8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： TO-263, 3 PIN
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 232K
代理商： IXTA8N50P
2006 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
500
500
V
V
V
GS
V
GSM
Transient ±40
Continuous
±30
V
V
I
D25
I
DM
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
8
A
A
14
I
AR
E
AR
E
AS
8
A
20
mJ
mJ
400
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 18
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
10
V/ns
P
D
150
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
T
SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
°
C
°
C
M
d
Mounting torque
(TO-220)
1.13/10 Nm/lb.in.
Weight
TO-220
TO-263
4
3
g
g
G = Gate
S = Source
D = Drain
TAB = Drain
DS99321E(03/06)
Symbol
(T
J
= 25
°
C unless otherwise specified)
V
GS
= 0 V, I
D
= 250
μ
A
Test Conditions
Characteristic Values
Min. Typ.
Max.
BV
DSS
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 100
μ
A
3.0
5.5
V
I
GSS
V
GS
=
±
30 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
5
μ
A
μ
A
T
J
= 125
°
C
50
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
0.8
PolarHV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Features
l
International standard packages
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density
TO-263 (IXTA)
TO-220 (IXTP)
D
(TAB)
G
S
G
S
(TAB)
IXTA 8N50P
IXTP 8N50P
V
DSS
I
D25
R
DS(on)
≤
0.8
= 500 V
= 8 A
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