參數(shù)資料
型號: IXTH12N120
廠商: IXYS CORP
元件分類: JFETs
英文描述: Power MOSFET, Avalanche Rated High Voltage
中文描述: 12 A, 1200 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝: TO-247AD, 3 PIN
文件頁數(shù): 3/4頁
文件大?。?/td> 553K
代理商: IXTH12N120
2004 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25
o
C
0
2
4
6
8
10
12
14
16
18
20
0
3
6
9
12
V
D S
- Volts
15
18
21
24
27
30
I
D
V
GS
= 10V
8V
7V
6V
6.5V
6.5V
Fig. 3. Output Characteristics
@ 125
o
C
0
1
2
3
4
5
6
7
8
9
10
11
12
0
4
8
12
16
V
D S
- Volts
20
24
28
32
36
40
I
D
V
GS
= 10V
8V
7V
5V
5.5V
6.5V
6V
Fig. 1. Output Characteristics
@ 25
o
C
0
1
2
3
4
5
6
7
8
9
10
11
12
0
2
4
6
V
D S
- Volts
8
10
12
14
16
18
I
D
V
GS
= 10V
8V
7.5V
7V
6V
6.5V
Fig. 4. R
DS(on
)
Normalized to 0.5 I
D25
Value vs. Junction Temperature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
-50
-25
0
T
J
- Degrees Centigrade
25
50
75
100
125
150
R
D
I
D
= 12A
I
D
= 6A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Temperature
0
2
4
6
8
10
12
14
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
Fig. 5. R
DS(on)
Normalized to
0.5 I
D25
Value vs. I
D
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
0
2
4
6
8
10
12
14
16
18
20
I
D
- Amperes
R
D
T
J
= 125oC
T
J
= 25oC
V
GS
= 10V
IXTH 12N120
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