參數(shù)資料
型號： IXTH35N30
廠商： IXYS CORP
元件分類： JFETs
英文描述： MegaMOSTMFET
中文描述： 35 A, 300 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝： TO-247AD, 3 PIN
文件頁數(shù)： 1/4頁
文件大?。?/td> 107K
代理商： IXTH35N30
1 - 4
2000 IXYS All rights reserved
V
DSS
300 V
300 V
300 V
I
D25
35 A
40 A
40 A
R
DS(on)
0.10
0.085
0.088
IXTH 35N30
IXTH 40N30
IXTM 40N30
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
300
300
V
V
±
20
±
30
V
V
T
C
= 25
°
C
35N30
40N30
35N30
40N30
35
40
140
160
A
A
A
A
I
DM
T
C
= 25
°
C, pulse width limited by T
JM
P
D
T
J
T
JM
T
stg
M
d
Weight
T
C
= 25
°
C
300
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque
1.13/10
Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
TO-247 AD (IXTH)
MegaMOS
TM
FET
N-Channel Enhancement Mode
TO-204 AE (IXTM)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
D
G
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 250
μ
A
300
V
V
2
4
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
200
μ
A
mA
1
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
IXTH35N30
IXTH40N30
IXTM40N30
0.10
0.085
0.088
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
Features
l
International standard packages
l
Low R
HDMOS
TM
process
l
Rugged polysilicon gate cell structure
l
Low package inductance (< 5 nH)
- easy to drive and to protect
l
Fast switching times
Applications
l
Switch-mode and resonant-mode
power supplies
l
Motor controls
l
Uninterruptible Power Supplies (UPS)
l
DC choppers
Advantages
l
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l
Space savings
l
High power density
91535E(5/96)
D (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料
PDF描述
IXTM40N30 N-Channel Enhancement Mode MegaMOSFET(最大漏源擊穿電壓300V,導(dǎo)通電阻0.088Ω的N溝道增強型MegaMOSFET)
IXTH50P085 Standard Power MOSFET
IXTH50P10 Standard Power MOSFET
IXTH50N20 RES, 11K OHM, 1%, 1/10W, 100PPM CHIP, 0805
IXTH68N20 High Current MegaMOSFET
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