參數(shù)資料
型號(hào)： IXTH68N20
廠商： IXYS CORP
元件分類： JFETs
英文描述： High Current MegaMOSFET
中文描述： 68 A, 200 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 320K
代理商： IXTH68N20
1998 IXYS All rights reserved
C2 - 14
Symbol
(T
J
= 25°C unless otherwise specified)
Test Conditions
Characteristic Values
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 5 mA
200
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.0
4.0
V
I
GSS
V
GS
= ±20 V DC, V
DS
= 0
±100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25°C
T
J
= 125°C
500
μ
A
mA
3
R
DS(on)
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300 ms, duty cycle d
≤
2%
35
m
TO-247AD (IXTH)
Features
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
International standard package
Fast switching times
Applications
Motor controls
DC choppers
Uninterruptable Power Supplies (UPS)
Switch-mode and resonant-mode
Advantages
Easy to mount with one screw
(isolated mounting screw hole)
Space savings
High power density
95512C (12/97)
High Current
MegaMOS
TM
FET
N-Channel Enhancement Mode
IXYS reserves the right to change limits, test conditions and dimensions.
Preliminary data
Symbol
Test conditions
Maximum ratings
V
DSS
V
DGR
T
J
T
J
= 25°C to 150°C
= 25°C to 150°C; R
GS
= 1.0 M
200
200
V
V
V
GS
V
GSM
Continuous
Transient
±20
±30
V
V
I
D25
T
C
= 25°C
74N20
68N20
74N20
68N20
74
68
A
A
A
A
I
DM
T
C
= 25°C, pulse width limited by T
JM
296
272
P
D
T
C
= 25°C
74N20
68N20
416
300
W
W
T
J
T
JM
T
stg
-55 ... +150
°C
°C
°C
150
-55 ... +150
M
d
Mounting torque
1.13/10
Nm/lb.in.
Weight
TO-264
TO-247
10
6
g
g
Max lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
D (TAB)
V
DSS
200 V
200 V
I
D25
74 A
68 A
R
DS(on)
35 m
W
35 m
W
IXTK 74 N20
IXTH 68 N20
TO-264 AA (IXTK)
S
G
D
D (TAB)
G = Gate
S = Source
D
Tab = Drain
= Drain
相關(guān)PDF資料
PDF描述
IXTK74N20 High Current MegaMOSFET
IXTH6N120 High Voltage Power MOSFET
IXTT6N120 High Voltage Power MOSFET
IXTH6N90 Standard Power MOSFET
IXTH6N90A Standard Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXTH68P20T 功能描述:MOSFET TrenchP Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH6N100D2 功能描述:MOSFET 6Amps 1000V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH6N120 功能描述:MOSFET 6 Amps 1200V 2.700 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH6N150 功能描述:MOSFET HIGH VOLT PWR MOSFET 1500V 6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH6N50D2 功能描述:MOSFET N-CH MOSFETS (D2) 500V 6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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