參數(shù)資料
型號(hào)： IXTH36P10
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： Standard Power MOSFET
中文描述： 36 A, 100 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247AD
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 89K
代理商： IXTH36P10
2002 IXYS All rights reserved
TO-247 AD
G = Gate,
S = Source,
D = Drain,
TAB = Drain
D (TAB)
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
P
D
T
J
T
JM
T
stg
T
L
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
-100
V
-100
V
Continuous
±
20
±
30
V
Transient
V
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
J
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
-36
A
-144
A
-36
A
30
mJ
180
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
M
d
Weight
Mounting torque
1.13/10
Nm/lb.in.
6
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= -250
μ
A
-100
V
V
GS(th)
V
DS
= V
GS
, I
D
= -250
μ
A
-3.0
-5.0
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
-25
-1
μ
A
mA
R
DS(on)
V
GS
= -10 V, I
D
= 0.5 I
D25
75
m
Features
International standard package
JEDEC TO-247 AD
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance (<5 nH)
- easy to drive and to protect
Applications
High side switching
Push-pull amplifiers
DC choppers
Automatic test equipment
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
98908 (2/02)
P-Channel Enhancement Mode
Avalanche Rated
Standard Power MOSFET
IXTH 36P10
Advance Technical Information
V
DSS
I
D25
R
DS(on)
= 75 m
= -100 V
= -36 A
相關(guān)PDF資料
PDF描述
IXTH3N120 High Voltage Power MOSFETs
IXTH40N30 N-Channel Enhancement Mode MegaMOSFET(最大漏源擊穿電壓300V,導(dǎo)通電阻0.085Ω的N溝道增強(qiáng)型MegaMOSFET)
IXTH35N30 MegaMOSTMFET
IXTM40N30 N-Channel Enhancement Mode MegaMOSFET(最大漏源擊穿電壓300V,導(dǎo)通電阻0.088Ω的N溝道增強(qiáng)型MegaMOSFET)
IXTH50P085 Standard Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXTH36P15P 功能描述:MOSFET PolarP Power MOSFETs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH39N08MA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 39A I(D) | TO-247(5)
IXTH39N08MB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 39A I(D) | TO-247(5)
IXTH39N10MA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 39A I(D) | TO-247(5)
IXTH39N10MB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 39A I(D) | TO-247(5)
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*