參數(shù)資料
型號： IXTH6N90A
廠商： IXYS CORP
元件分類： JFETs
英文描述： Standard Power MOSFET
中文描述： 6 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝： TO-247AD, 3 PIN
文件頁數(shù)： 2/4頁
文件大小： 104K
代理商： IXTH6N90A
2 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
4
6
S
C
iss
C
oss
C
rss
2600
180
45
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
t
d(on)
t
r
t
d(off)
t
f
35
40
100
60
100
110
200
100
ns
ns
ns
ns
V
GS
R
G
= 4.7
,
(External)
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
Q
g(on)
Q
gs
Q
gd
88
21
38
130
30
70
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
thJC
R
thCK
0.7
K/W
K/W
0.25
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
6
A
I
SM
Repetitive; pulse width limited by T
JM
24
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.5
V
t
rr
I
F
= I
S
, -di/dt = 100 A/
μ
s, V
R
= 100 V
900
ns
IXTH 6N90
IXTM 6N90
IXTH 6N90A
IXTM 6N90A
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
TO-247 AD (IXTH) Outline
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
Dim.
Millimeter
Min.
6.4
Inches
Min.
.250
Max.
11.4
3.42
1.09
22.22
11.17
5.71
Max.
.450
.135
.043
.875
.440
.225
A
A1
b
D
e
e1
.97
.038
10.67
5.21
.420
.205
L
p
p1 3.84
q
R
R1
s
16.64
7.93
3.84
.312
.151
.151
1.187 BSC
4.19
4.19
.165
.165
30.15 BSC
13.33
4.77
17.14
.525
.188
.675
.655
TO-204AA (IXTM) Outline
Pins
1 - Gate
Case - Drain
2 - Source
1 2 3
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
4,850,072
4,931,844
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
相關(guān)PDF資料
PDF描述
IXTH6N80 N-Channel Enhancement Mode
IXTH6N80A 32-Bit Microcontroller IC; Controller Family/Series:(ARM9); Number of I/O Pins:24; ADC Channels:5; Number of Timers 8/12/16/32 Bits:0 / 0 / 2 / 1; Number of PWM Channels:1; Clock Speed:200MHz; Interfaces:AC97, I2S, SPI, UART, USB
IXTH7P50 32-Bit Microcontroller IC; Controller Family/Series:(ARM9); Number of I/O Pins:32; ADC Channels:8; Number of Timers 8/12/16/32 Bits:0 / 0 / 2 / 1; Number of PWM Channels:1; Clock Speed:200MHz; Interfaces:AC97, I2S, SPI, UART, USB
IXTH8P50 IC ARM920T MCU 200MHZ 352-PBGA
IXTH88N15 High Current Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXTH72N20 功能描述:MOSFET 72 Amps 200V 0.033 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH72N20T 功能描述:MOSFET 72 Amps 200V 33 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH72N30T 功能描述:MOSFET 72 Amps 300V 52 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH74N15T 功能描述:MOSFET 74 Amps 150V 27 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH75N08 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 75A I(D) | TO-218VAR
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*