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參數(shù)資料
| 型號： | IXTH7P50 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | 32-Bit Microcontroller IC; Controller Family/Series:(ARM9); Number of I/O Pins:32; ADC Channels:8; Number of Timers 8/12/16/32 Bits:0 / 0 / 2 / 1; Number of PWM Channels:1; Clock Speed:200MHz; Interfaces:AC97, I2S, SPI, UART, USB |
| 中文描述： | 7 A, 500 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 75K |
| 代理商： | IXTH7P50 |
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= -10 V; I
D
= I
D25
, pulse test
4
5
S
C
iss
C
oss
C
rss
3400
pF
V
GS
= 0 V, V
DS
= -25 V, f = 1 MHz
450
pF
175
pF
t
d(on)
t
r
t
d(off)
t
f
33
ns
V
GS
= -10 V, V
DS
= 0.5 V
DSS
I
D
= 0.5 I
D25
R
G
= 4.7
(External)
27
ns
35
ns
35
ns
Q
g(on)
Q
gs
Q
gd
130
nC
V
GS
= -10 V, V
DS
= 0.5 V
DSS
I
D
= 0.5 I
D25
32
nC
64
nC
R
thJC
R
thCS
0.7
K/W
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0
7P50
8P50
-7
-8
A
A
I
SM
Repetitive; pulse width limited by T
JM
7P50
8P50
-28
-32
A
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
-3
V
t
rr
I
F
= I
S
, di/dt = 100 A/
μ
s
400
ns
IXTH 7P50
IXTH 8P50
Dim.
Millimeter
Min.
Inches
Min.
Max.
Max.
A
A
1
A
2
b
b
1
b
2
C
D
E
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
.4
.8
.016
.819
.610
.031
.845
.640
20.80
15.75
21.46
16.26
e
L
L1
P
Q
5.20
19.81
5.72
20.32
4.50
0.205 0.225
.780
.800
.177
3.55
5.89
3.65
6.40
.140
0.232 0.252
.144
R
S
4.32
6.15 BSC
5.49
.170
242 BSC
.216
TO-247 AD Outline
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
1 2 3
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| IXTH80N20L | 功能描述:MOSFET Standard Linear Power MOSFETs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXTH86N20T | 功能描述:MOSFET 86 Amps 200V 29 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXTH88N15 | 功能描述:MOSFET 88 Amps 150V 0.022 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXTH88N30P | 功能描述:MOSFET 88 Amps 100 V 0.04 Ohms Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXTH8P45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 450V V(BR)DSS | 8A I(D) | TO-218VAR |
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