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參數(shù)資料
| 型號： | IXTM40N30 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Enhancement Mode MegaMOSFET(最大漏源擊穿電壓300V,導通電阻0.088Ω的N溝道增強型MegaMOSFET) |
| 中文描述： | 40 A, 300 V, 0.088 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE |
| 封裝： | TO-204AE, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 107K |
| 代理商： | IXTM40N30 |
2 - 4
2000 IXYS All rights reserved
IXTH 35N30
IXTH 40N30
IXTM 40N30
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
22
25
S
C
iss
C
oss
C
rss
4600
650
240
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
t
d(on)
t
r
t
d(off)
t
f
24
40
75
40
30
90
100
90
ns
ns
ns
ns
V
GS
R
G
= 2
,
(External)
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
Q
g(on)
Q
gs
Q
gd
190
28
85
220
50
105
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
thJC
R
thCK
0.42
K/W
K/W
0.25
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
35N30
40N30
35
40
A
A
I
SM
Repetitive;
pulse width limited by T
JM
35N30
40N30
140
160
A
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.5
V
t
rr
I
F
= I
S
, -di/dt = 100 A/
μ
s, V
R
= 100 V
400
ns
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
TO-247 AD (IXTH) Outline
Dim.
Millimeter
Min.
6.4
1.53
1.45
Inches
Min.
.250
.060
.057
Max.
11.4
3.42
1.60
22.22
11.17
5.71
Max.
.450
.135
.063
.875
.440
.225
A
A1
b
D
e
e1
10.67
5.21
.420
.205
L
p
p1 3.84
q
R
12.58
R1
s
16.64
11.18
3.84
12.19
4.19
4.19
.440
.151
.151
1.187 BSC
.495
.131
.655
.480
.165
.165
30.15 BSC
13.33
4.77
17.14
.525
.188
.675
3.33
TO-204AE (IXTM) Outline
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
Pins
1 - Gate
Case - Drain
2 - Source
1 2 3
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
4,850,072
4,931,844
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXTM40N30 | 制造商:IXYS Corporation 功能描述:MOSFET N TO-3 |
| IXTM42N15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 42A I(D) | TO-3 |
| IXTM42N20 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 42A I(D) | TO-3 |
| IXTM4N100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4A I(D) | TO-204AC |
| IXTM4N100A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4A I(D) | TO-204AC |
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