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參數(shù)資料
| 型號： | IXTQ62N15P |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | PolarHT Power MOSFET |
| 中文描述： | 62 A, 150 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 255K |
| 代理商： | IXTQ62N15P |
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents:
4,850,072
4,881,106
IXTA 62N15P IXTP 62N15P
IXTQ 62N15P
Symbol
Test Conditions Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
14
24
S
C
iss
C
oss
C
rss
2250
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
660
pF
185
pF
t
d(on)
t
r
t
d(off)
t
f
27
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 10
(External)
38
ns
76
ns
35
ns
Q
g(on)
Q
gs
Q
gd
70
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
20
nC
38
nC
R
thJC
R
thCS
0.42
°
C/W
°
C/W
°
C/W
(TO-3P)
(TO-220)
0.21
0.25
Source-Drain Diode Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
Min.
Typ.
Max.
I
S
V
GS
= 0 V
62
A
I
SM
Repetitive
150
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.5
V
t
rr
Q
RM
I
F
= 25 A, -di/dt = 100 A/
μ
s
V
R
= 100 V, V
GS
= 0 V
150
2.0
ns
μ
C
TO-3P (IXTQ) Outline
Pins:
1 - Gate
3 - Source
2 - Drain
Tab - Drain
TO-220 (IXTP) Outline
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
TO-263 (IXTA) Outline
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXTQ62N25T | 功能描述:MOSFET 62 Amps 250V 50 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXTQ64N25 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:PolarHT Power MOSFET |
| IXTQ64N25P | 功能描述:MOSFET 64 Amps 250V 0.049 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXTQ69N30 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:PolarHT Power MOSFET |
| IXTQ69N30P | 功能描述:MOSFET 69 Amps 300V 0.049 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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