參數(shù)資料
型號(hào)： IXTQ96N20P
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： N-Channel Engancement Mode
中文描述： 96 A, 200 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-3P, 3 PIN
文件頁(yè)數(shù)： 2/5頁(yè)
文件大小： 609K
代理商： IXTQ96N20P
Symbol
Test Conditions Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
40
52
S
C
iss
C
oss
C
rss
4800
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1020
270
pF
pF
t
d(on)
t
r
t
d(off)
t
f
28
30
ns
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
R
G
= 4
(External)
75
30
ns
ns
Q
g(on)
Q
gs
Q
gd
145
30
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
80
nC
R
thJC
R
thCK
0.25K/W
(TO-3P, TO-247)
0.21
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
96
A
I
SM
Repetitive
240
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.5
V
t
rr
I
= 25 A
-di/dt = 100 A/
μ
s
V
R
= 100 V
160
ns
Q
RM
3.0
μ
C
IXTH 96N20P IXTQ 96N20P
IXTT 96N20P
TO-268 Outline
TO-3P (IXTQ) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
TO-247 AD Outline
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
1 2 3
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
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