參數(shù)資料
型號: IXTT69N30P
廠商: IXYS CORP
元件分類: JFETs
英文描述: PolarHT Power MOSFET
中文描述: 69 A, 300 V, 0.049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
封裝: TO-268, 3 PIN
文件頁數(shù): 4/5頁
文件大?。?/td> 107K
代理商: IXTT69N30P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTQ 69N30P
IXTT 69N30P
Fig. 11. Capacitance
100
1000
10000
0
5
10
15
20
25
30
35
40
V
- Volts
C
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100
120
140
160
Q
G
- nanoCoulombs
V
G
V
DS
= 150V
I
D
= 34.5A
I
G
= 10mA
Fig. 7. Input Admittance
0
10
20
30
40
50
60
70
80
90
100
4
4.5
5
5.5
6
6.5
7
V
G S
- Volts
I
D
T
J
= 125oC
25oC
-40oC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
0
20
40
60
80
100
120
140
I
D
- Amperes
g
f
T
J
= -40oC
25oC
125oC
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
20
40
60
80
100
120
140
160
180
200
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
V
S D
- Volts
I
S
T
J
= 125oC
T
J
= 25oC
Fig. 12. Forward-Bias Safe
Operating Area
1
10
100
1000
10
100
1000
V
D S
- Volts
I
25μs
1ms
DC
T
C
= 25oC
R
DS
(on)
Limit
10ms
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