參數(shù)資料
型號: IXTT6N120
廠商: IXYS CORP
元件分類: 功率晶體管
英文描述: High Voltage Power MOSFET
中文描述: 6 A, 1200 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
封裝: TO-268, 3 PIN
文件頁數(shù): 4/4頁
文件大小: 594K
代理商: IXTT6N120
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXTH 6N120
IXTT 6N120
Fig. 11. Capacitance
10
100
1000
10000
0
5
10
15
V
DS
- Volts
20
25
30
35
40
C
C
iss
C
oss
C
rss
f = 1Mhz
Fig. 10. Gate Charge
0
2
4
6
8
10
0
10
20
30
40
50
60
Q
G
- nanoCoulombs
V
G
V
DS
= 600V
I
D
= 3A
I
G
= 10mA
Fig. 7. Input Admittance
0
1
2
3
4
5
6
3.5
4
4.5
5
5.5
6
6.5
V
GS
- Volts
I
D
T
J
= -40oC
25oC
125oC
Fig. 12. Maximum Transient Thermal
Resistance
0.01
0.1
1
1
10
100
1000
Pulse Width - milliseconds
R
(
(
Fig. 8. Transconductance
0
2
4
6
8
10
12
0
15
3
4.5
6
7.5
9
I
D
- Amperes
G
f
T
J
= -40oC
25oC
125oC
Fig. 9. Source Current vs. Source-To-Drain
Voltage
0
4
8
12
16
20
0.4
0.5
0.6
V
SD
- Volts
0.7
0.8
0.9
I
S
T
J
= 125oC
T
J
= 25oC
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