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參數(shù)資料
| 型號(hào)： | J211 |
| 廠商： | LINEAR INTEGRATED SYSTEMS INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER |
| 中文描述： | Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92 |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 100K |
| 代理商： | J211 |
1997 Dec 01
2
Philips Semiconductors
Product specification
N-channel field-effect transistors
J210; J211; J212
FEATURES
High speed switching
Interchangeability of drain and source connections
High impedance.
APPLICATIONS
Analog switches
Choppers, multiplexers and commutators
Audio amplifiers.
DESCRIPTION
N-channel symmetrical junction field-effect transistor in a
TO-92 (SOT54) package.
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A and
SNW-FQ-302B.
PINNING - TO-92 (SOT54)
PIN
SYMBOL
DESCRIPTION
1
2
3
g
s
d
gate
source
drain
Fig.1 Simplified outline and symbol.
Marking codes:
J210: J210.
J211: J211.
J212: J212.
handbook, halfpage
1
3
2
MAM197
s
d
g
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
±
25
UNIT
V
DS
V
GSoff
drain-source voltage
gate-source cut-off voltage
J210
J211
J212
drain current
J210
J211
J212
total power dissipation
common-source transfer admittance
J210
J211
J212
V
I
D
= 1 nA; V
DS
= 15 V
1
2.5
4
3
4.5
6
V
V
V
I
DSS
V
GS
= 0; V
DS
= 15 V
2
7
15
15
20
40
400
mA
mA
mA
mW
P
tot
y
fs
T
amb
≤
50
°
C
V
GS
= 0; V
DS
= 15 V
4
6
7
12
12
12
mS
mS
mS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| J211"D74Z | 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL JFET -25V TO-92 |
| J211 | 制造商:Vishay Siliconix 功能描述:TRANSISTOR JFET N TO-92 |
| J211_D27Z | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時(shí)的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| J211_D74Z | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時(shí)的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| J211_Q | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時(shí)的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
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