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參數(shù)資料
| 型號(hào)： | J271 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel JFET(最小柵源擊穿電壓30V，最小飽和漏極電流-6mA的P溝道結(jié)型場(chǎng)效應(yīng)管) |
| 中文描述： | P溝道場(chǎng)效應(yīng)（最小柵源擊穿電壓30V的，最小飽和漏極電流，6毫安的P溝道結(jié)型場(chǎng)效應(yīng)管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 53K |
| 代理商： | J271 |
J/SST270 Series
2
Siliconix
P-37405—Rev. B, 04-Jul-94
Specifications
a
Limits
J/SST270
J/SST271
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Unit
Static
Gate-Source Breakdown Voltage
V
(BR)GSS
I
G
= 1 A , V
DS
= 0 V
45
30
30
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= –15 V, I
D
= –1 nA
0.5
2.0
1.5
4.5
Saturation Drain Current
c
I
DSS
V
DS
= –15 V, V
GS
= 0 V
–2
–15
–6
–50
mA
Gate Reverse Current
I
GSS
V
GS
= 20 V, V
DS
= 0 V
10
200
200
pA
T
A
= 125 C
5
nA
Gate Operating Current
I
G
V
DG
= –15 V, I
D
= –1 mA
10
pA
Drain Cutoff Current
I
D(off)
V
DS
= –15 V, V
GS
= 10 V
–10
Gate-Source Forward Voltage
V
GS(F)
I
G
= –1 mA , V
DS
= 0 V
–0.7
V
Dynamic
Common-Source Forward Transconductance
g
fs
V
DS
= –15 V, V
GS
= 0 V
f = 1 kHz
6
15
8
18
mS
Common-Source Output Conductance
g
os
200
500
S
Common-Source Input Capacitance
C
iss
= 15 V V
V
DS
= –15 V, V
GS
= 0 V
f = 1 MHz
20
Common-Source
Reverse Transfer Capacitance
C
rss
4
pF
Equivalent Input Noise Voltage
e
n
V
DG
= –10 V, V
GS
= 0 V
f = 1 kHz
20
nV
√
Hz
Notes
a.
b.
c.
T
A
= 25 C unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW
300 s duty cycle
3%.
PSCIA
Typical Characteristics
200
0
6
8
10
4
2
160
0
–100
–80
–60
–40
–20
0
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
–
I
D
V
GS(off)
– Gate-Source Cutoff Voltage (V)
r
DS
@ I
D
= –1 mA, V
GS
= 0 V
I
DSS
@ V
DS
= –15 V, V
GS
= 0 V
I
DSS
r
DS
120
80
40
18
0
15
12
9
6
3
6
8
10
2
250
200
150
100
50
0
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
g
f
V
GS(off)
– Gate-Source Cutoff Voltage (V)
g
fs
and g
os
@ V
DS
= –15 V
V
GS
= 0 V, f = 1 kHz
g
fs
g
os
4
r
D
–
)
S
g
–
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|---|---|
| J271 | 制造商:Fairchild Semiconductor Corporation 功能描述:Bipolar Transistor |
| J271_Q | 功能描述:JFET P-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| J271-00005E | 制造商:LG Corporation 功能描述:HANDLE,BACK |
| J271-00005S | 制造商:LG Corporation 功能描述:HANDLE,BACK |
| J271-E3 | 功能描述:JFET 30V 6mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
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