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參數(shù)資料
| 型號： | JAN2N2221A |
| 英文描述： | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | TO-18 |
| 中文描述： | 晶體管|晶體管|叩| 40V的五（巴西）總裁| 800mA的一（c）|到18 |
| 文件頁數(shù)： | 12/23頁 |
| 文件大?。?/td> | 135K |
| 代理商： | JAN2N2221A |
MIL-PRF-19500/545D
2
1.4 Primary electrical characteristics at TC = +25°C.
Limits
hFE2 (1)
VCE = 5 V
IC = 2.5 A dc
|hfe|
VCE = 5 V
IC = 500 mA dc
f = 10 MHz
VCE(sat)2 (1)
IC = 5 A dc
IB = 500 mA dc
VCE(sat)2 (1)
IC = 5 A dc
IB = 500 mA dc
Cobo
VCB = 10 V dc
IE = 0
f = 1 Mhz
RθJA
RθJC
2N5151
(2)
2N5153
(2)
2N5151
(2)
2N5153
(2)
Min
Max (TO-205)
Max (U3)
30
90
70
200
67
V dc
2.2
V dc
1.5
pF
250
°C/W
175
150
°C/W
15
1.75
(1) Pulsed (see 4.5.1)
(2) The limits specified apply to all package outlines unless otherwise stated.
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in section 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500
- Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750
- Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this specification and the references cited
herein, the text of this specification takes precedence. Nothing in this document, however, supersedes applicable
laws and regulations unless a specific exemption has been obtained.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JAN2N2221AL | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 3PIN TO-18 - Bulk |
| JAN2N2221AUA | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 4PIN UA - Trays |
| JAN2N2221AUB | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 3PIN UB - Waffle Pack |
| JAN2N2222 | 制造商:Motorola 功能描述:2N222 MOT'87 N6E2B |
| JAN2N2222A | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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