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參數(shù)資料
| 型號： | JAN2N2221A |
| 英文描述： | TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | TO-18 |
| 中文描述： | 晶體管|晶體管|叩| 40V的五（巴西）總裁| 800mA的一（c）|到18 |
| 文件頁數(shù)： | 5/23頁 |
| 文件大?。?/td> | 135K |
| 代理商： | JAN2N2221A |
MIL-PRF-19500/545D
13
4.5.2. Thermal resistance. Thermal resistance measurements shall be conducted in accordance with
method 3131 of MIL-STD-750. The following details shall apply:
a.
Collector current magnitude during power application shall be 500 mA minimum dc.
b.
Collector to emitter voltage magnitude shall be 10 V dc.
c.
Reference temperature measuring point shall be the case.
d.
Reference temperature measuring point shall be within the range +25
°C ≤ T
R ≤ +35°C. The chosen
reference temperature shall be recorded before the test is started.
e.
Mounting arrangement shall be with heat sink to case.
f.
Maximum limit of RθJC shall be 15.0°C/W for (TO-205) and 1.75°C/W for (U3).
4.5.3. Thermal response (VBE measurements). The
V
BE measurements shall be performed in accordance
with method 3131 of MIL-STD-750. The
V
BE conditions (IH and VH) and maximum limit shall be derived by each
vendor. The chosen
V
BE measurement and conditions for each device in the qualification lot shall be submitted in
the qualification report and a thermal response curve shall be plotted. The chosen
V
BE shall be considered final
after the manufacturer has had the opportunity to test five consecutive lots. One-hundred percent safe operating
area (SOA) testing may be performed in lieu of thermal response testing herein provided that the appropriate
conditions of temperature, time, current, and voltage to achieve die attach integrity are approved by the qualifying
activity. The following parameter measurements shall apply:
a. IM measurement ......................................................................... 10 mA.
b. VCE measurement voltage ......................................................... 16 V (same as VH).
c. IH collector heating current ......................................................... 1 A minimum.
d. VH collector-emitter heating voltage ........................................... 16 V minimum.
e. tH heating time ............................................................................ 10 ms.
f. tMD measurement delay time ...................................................... 50 s.
g. tSW sample window time ............................................................ 10 s maximum.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JAN2N2221AL | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 3PIN TO-18 - Bulk |
| JAN2N2221AUA | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 4PIN UA - Trays |
| JAN2N2221AUB | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 0.8A 3PIN UB - Waffle Pack |
| JAN2N2222 | 制造商:Motorola 功能描述:2N222 MOT'87 N6E2B |
| JAN2N2222A | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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