參數(shù)資料
型號: JAN2N6274
廠商: MICROSEMI CORP-LAWRENCE
元件分類: BIP General Purpose Power
英文描述: 50 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-204AE
封裝: TO-3, 2 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 119K
代理商: JAN2N6274
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/514
T4-LDS-0163 Rev. 1 (100546)
Page 1 of 3
DEVICES
LEVELS
JAN
JANTX
JANTXV
TO-3 (TO-204AE)
2N6274
2N6277
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Condition
Symbol
2N6274
2N6277
Unit
Collector-Emitter Voltage
V
CEO
100
150
Vdc
Collector-Base Voltage
V
CBO
120
180
Vdc
Emitter-Base Voltage
V
EBO
6.0
6.0
Vdc
Base Current
I
B
20
20
Adc
Collector Current
I
C
50
50
Adc
Total Power Dissipation
@ T
C
= +25°C
(1)
@ T
C
= +100°C
(2)
P
T
250
143
W
Operating & Storage Temperature Range
T
j
, T
stg
-65 to +200
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Max
Unit
Thermal resistance, Junction-to-Case
R
θ
JC
0.7
°C/W
Note:
1) Derate linearly 1.43 W/°C between T
C
= +25°C and T
C
= 200°C
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERTICS
(1)
Collector-Emitter Breakdown Voltage
I
C
= 50mAdc
2N6274
2N6277
2N6274
2N6277
2N6274
2N6277
2N6274
2N6277
V
(BR)CEO
100
150
Vdc
Collector-Emitter Cutoff Current
V
CE
= 50Vdc
V
CE
= 75Vdc
Collector-Emitter Cutoff Current
V
CE
= 120Vdc, V
BE
= -1.5Vdc
V
CE
= 180Vdc, V
BE
= -1.5Vdc
Collector-Base Cutoff Current
V
CB
= 120Vdc
V
CB
= 180Vdc
Emitter-Base Cutoff Current
V
EB
= 6.0Vdc
I
CEO
50
50
10
10
10
10
μAdc
I
CEX
μAdc
I
CBO
μAdc
I
EBO
100
μAdc
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