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參數(shù)資料
| 型號： | JAN2N6989 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | BIP General Purpose Power |
| 英文描述： | 0.8 A, 50 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR, TO-116 |
| 封裝： | DIP-14 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 31K |
| 代理商： | JAN2N6989 |
6 Lake Street, Lawrence, MA 01841 03/98 REV: B
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Page 1 of 2
MAXIMUM RATINGS
(1)
Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
50
75
6.0
800
Units
Vdc
Vdc
Vdc
mAdc
Collector-Emitter Voltage
(3)
Collector-Base Voltage
(3)
Emitter-Base Voltage
(3)
Collector Current
(3)
Total Power Dissipation @ T
A
= +25
0
C
(2)
2N6989
2N6990
P
D
1.5
0.4
W
Operating & Storage Junction
Temperature Range
1) Maximum voltage between transistors shall be
≥
500 Vdc
2) Derate linearly 8.57 mW/
0
C above T
A
= +25
0
C for 2N6989
Derate linearly 2.286 mW/
0
C above T
A
= +25
0
C for 2N6990
Ratings apply to total package.
3) Ratings apply to each transistor in the array.
T
J
,
T
stg
-65 to +200
0
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
I
C
= 10
μ
Adc
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
Emitter-Base Breakdown Current
I
E
= 10
μ
Adc
Collector-Base Cutoff Current
V
CB
= 60 Vdc
Emitter-Base Cutoff Current
V
EB
= 4.0Vdc
Symbol
Min.
Max.
Unit
V
(BR)CBO
75
Vdc
V
(BR)
CEO
50
Vdc
V
(BR)EBO
6.0
Vdc
I
CBO
10
η
Adc
I
EBO
10
η
Adc
TECHNICAL DATA
2N6989 JAN, JTX, JTXV
2N6990
JAN, JTX, JTXV
Processed per MIL-PRF-19500/559
MULTIPLE (QUAD) NPN SILICON
DUAL-IN-LINE AND FLATPACK TRANSISTOR
2N6989
TO- 116
2N6990
14 PIN FLAT PACK
MIL-PRF
QML
DEVICES
Back to Bipolar Small Signal
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