參數(shù)資料
型號(hào)： JAN2N6756
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | TO-3
中文描述： 晶體管| MOSFET的| N溝道| 100V的五（巴西）直資|至3
文件頁(yè)數(shù)： 3/23頁(yè)
文件大?。?/td> 135K
代理商： JAN2N6756
MIL-PRF-19500/545D
11
4.3.2. Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc TA = room ambient
as defined in the general requirements, paragraph 4.5 of MIL-STD-750. Power shall be applied to the device to
achieve a Junction temperature, TJ=175 °C minimum and a minimum PD = 75% of PT maximum rated as defined
in paragraph 1.3 herein.
4.4. Conformance inspection. Conformance inspection shall be as specified herein.
4.4.1. Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein. Electrical measurements (end-points) shall be in accordance with the inspections of table I, subgroup 2 herein.
4.4.2. Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VIa of MIL-PRF-19500 (JANS) and 4.4.2.1 herein. Electrical measurements (end-points)
shall be in accordance with group A, subgroup 2 herein. Delta measurements shall be in accordance with table II
herein. See 4.4.2.2 herein and table VIb of MIL-PRF-19500 for JAN, JANTX, and JANTXV group B testing.
Electrical measurements (end-points) requirements shall be in accordance with group A, subgroup 2 herein. Delta
measurements shall be in accordance with table II herein.
4.4.2.1. Group B inspection table VIa (JANS) of MIL-PRF-19500.
Subgroup
Method
Conditions
B4
1037
VCB = 40 V dc ± 1 V.
B5
1027
VCB = 10 V dc; 96 hours with PT = PT (max) at TA = 25°C, adjust TA to give TJ =
+275
°C minimum. Optionally the test may be performed for a minimum of 216 hours
with PT adjusted to achieve a TJ = +225°C minimum; sample size = 45, c = 0. In this
case the ambient temperature shall be adjusted such that a minimum 75 percent of
maximum rated PT (see1.3) is applied to the device under test.
(NOTE: If a failure occurs, resubmission shall be at the test conditions of the original
sample.)
B6
3131
see 4.5.2.
4.4.2.2. Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the
event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot
or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed
assembly lot shall be scrapped.
Step
Method
Conditions
1
1039
Steady-state life: Test condition B, 340 hours min., VCB = 10 - 30 V dc, Power shall be
applied to achieve TJ = +175°C minimum using a minimum of PD = 75 percent of
maximum rated PT as defined in 1.3. n = 45 devices, c = 0.
2
1039
The steady-state life test of step 1 shall be extended to 1,000 hrs for each die design.
Samples shall be selected from a wafer lot every twelve months of wafer production.
Group B step 2 shall not be required more than once for any single wafer lot. n = 45,
c = 0.
3
1032
High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0.
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參數(shù)描述
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JAN2N6762 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk
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JAN2N6764T1 制造商:Microsemi Corporation 功能描述:MOSFET N-CH TO-254AA
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