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參數(shù)資料
| 型號(hào)： | JAN2N6786 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 1.2A I(D) | TO-39 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 400V五（巴西）直| 1.2AI（四）| TO - 39封裝 |
| 文件頁(yè)數(shù)： | 18/23頁(yè) |
| 文件大?。?/td> | 135K |
| 代理商： | JAN2N6786 |
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MIL-PRF-19500/545D
4
NOTES:
1. Dimension are in inches.
2. Metric equivalents are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of 0.011 (.28 mm).
4. TL measured from maximum HD.
5. Outline in this zone is not controlled.
6. CD shall not vary more than 0.010 (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane 0.054 + 0.001 - 0.000 (1.37 + 0.03 - 0.00 mm) below seating plane shall be within 0.007
(0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC
8. LU applied between L1 and L2. LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and
beyond LL minimum.
9. All three leads.
10. The collector shall be electrically and mechanically connected to the case.
11. r (radius) applies to both inside corners of tab.
12. In accordance with ANSI Y14.5M, diameters are equivalent to
x symbology.
13. For transistor types 2N5151 and 2N5153, LL is 0.5 (12.70 mm) minimum, and 0.75 (19.05 mm) maximum.
14. For transistor types 2N5151L and 2N5153L, LL is 1.5 (38.10 mm) minimum and 1.75 (44.45 mm) maximum.
15. Lead designation, depending on device type, shall be as follows:
Lead number
TO-205
1
2
3
Emitter
Base
Collector
FIGURE 1. Physical dimensions (T0-205) - continued.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| JAN2N6788 | 制造商:Microsemi Corporation 功能描述:2N6788JAN - Bulk |
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| JAN2N6790 | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH TO-205AF TO-39 |
| JAN2N6790U | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 18-LCC |
| JAN2N6792 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2A I(D) | TO-39 |
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