參數(shù)資料
型號(hào)： JAN2N6786
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 1.2A I(D) | TO-39
中文描述： 晶體管| MOSFET的| N溝道| 400V五（巴西）直| 1.2AI（四）| TO - 39封裝
文件頁(yè)數(shù)： 4/23頁(yè)
文件大?。?/td> 135K
代理商： JAN2N6786
MIL-PRF-19500/545D
12
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements:
a.
For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers
(or from each wafer in the lot) from each wafer lot. See MIL-PRF-19500.
b.
Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2,
conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high
temperature, the samples for life test (group B for JAN, JANTX, and JANTXV) may be pulled prior to
the application of final lead finish.
4.4.3. Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in
accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein.
Subgroup
Method
Conditions
C2
2036
Test condition E, (not applicable for U3 packages).
C6
1037
VCB = 10 - 30 V dc, 6,000 cycles.
4.4.4. Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table IX of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with
table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein.
Subgroup
Method
Condition
Sampling plan
E1
1051
500 cycles
45 devices, c = 0
E2
1039
Condition A: 500 hours
45 devices, c = 0
E3
Not applicable
E4
3131
R
θJC = 15°C/W maximum (TO-205) 22 devices, c = 0 (See 4.5.2)
R
θJC = 1.75°C/W maximum (U3)
22 devices, c = 0 (See 4.5.2)
See 4.5.2
E5
Not applicable
4.5. Methods of inspection and test. Methods of inspection and test shall be as specified in the appropriate tables
and as follows.
4.5.1. Pulse measurements. Conditions for pulse measurements shall be as specified in section 4 of
MIL-STD-750.
相關(guān)PDF資料
PDF描述
JAN2N6788 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-39
JAN2N6790 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 3.5A I(D) | TO-39
JAN2N6792 TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2A I(D) | TO-39
JAN2N6794 TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 1.5A I(D) | TO-39
JAN2N6796 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-39
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JAN2N6788 制造商:Microsemi Corporation 功能描述:2N6788JAN - Bulk
JAN2N6788U 制造商:Microsemi Corporation 功能描述:2N6788UJAN - Bulk
JAN2N6790 制造商:Microsemi Corporation 功能描述:MOSFET N-CH TO-205AF TO-39
JAN2N6790U 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 18-LCC
JAN2N6792 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2A I(D) | TO-39
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*