參數資料
型號: JAN2N6989
廠商: MICROSEMI CORP-LAWRENCE
元件分類: BIP General Purpose Power
英文描述: 0.8 A, 50 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR, TO-116
封裝: DIP-14
文件頁數: 2/2頁
文件大小: 31K
代理商: JAN2N6989
6 Lake Street, Lawrence, MA 01841 03/98 REV: B
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Page 2 of 2
2N6989, 2N6990 JAN, SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS
(4)
Forward-Current Transfer Ratio
I
C
= 0.1 mAdc, V
CE
= 10 Vdc
I
C
= 1.0 mAdc, V
CE
= 10 Vdc
I
C
= 10 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 10 Vdc
I
C
= 500 mAdc, V
CE
= 10 Vdc
Collector-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
I
C
= 500 mAdc, I
B
= 50 mAdc
Base-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
I
C
= 500 mAdc, I
B
= 50 mAdc
DYNAMIC CHARACTERISTICS
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 20 mAdc, V
CE
= 10 Vdc, f = 100 MHz
Forward Current Transfer Ratio
I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
f
1.0 MHz
Input Capacitance
V
EB
= 0.5 Vdc, I
E
= 0, 100 kHz
f
1.0 MHz
(4) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
2.0%.
Symbol
Min.
Max.
Unit
h
FE
50
75
100
100
30
325
300
V
CE(sat)
0.3
1.0
Vdc
V
BE(sat)
0.6
1.2
2.0
Vdc
h
fe
2.5
8.0
h
fe
50
C
obo
8.0
pF
C
ibo
25
pF
Back to Bipolar Small Signal
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