參數(shù)資料
型號(hào)： JANS2N3634
廠商： MICROSEMI CORP-LAWRENCE
元件分類(lèi)： 功率晶體管
英文描述： PNP SILICON AMPLIFIER TRANSISTOR
中文描述： 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
封裝： TO-39, 3 PIN
文件頁(yè)數(shù)： 15/20頁(yè)
文件大小： 128K
代理商： JANS2N3634
MIL-PRF-19500/560E
4
Dimensions
Notes
Symbol
Inches
Millimeters
Min
Max
Min
Max
CD
0.305
0.355
7.75
8.51
CH
0.240
0.260
6.10
6.60
HD
0.335
0.370
8.51
9.40
LC
0.200 TP
5.08 TP
6
LD
0.016
0.021
0.41
0.53
7
LL
0.500
0.750
12.70
19.05
7
LU
0.016
0.019
0.41
0.48
7
L1
0.050
1.27
7
L2
0.250
6.35
7
TL
0.029
0.045
0.74
1.14
3
TW
0.028
0.034
0.71
0.86
10
P
0.100
2.54
5
Q
0.050
1.27
4
r
0.010
0.25
11
α
45
° TP
45
° TP
6
Notes
1, 2, 8, 9
NOTES:
1.
Dimensions are in inches.
2.
Metric equivalents are given for general information only.
3.
Symbol TL is measured from HD maximum.
4.
Details of outline in this zone are optional.
5.
Symbol CD shall not vary more than 0.010 (0.25 mm) in zone P. This zone is controlled for automatic
handling.
6.
Leads at gauge plane 0.054 inch (1.37 mm) +0.001 inch (0.03 mm) -0.000 inch (0.00 mm) below seating
plane shall be within 0.007 inch (0.18 mm) radius of true position (TP) relative to tab. Device may be
measured by direct methods or by gauge.
7.
Symbol LD applies between L1 and L2. Dimension LD applies between L2 and LL minimum.
8.
Lead designation, depending on device type, shall be as follows:
Lead number
TO-39
1
2
3
Emitter
Base
Collector
9.
Lead number three is electrically connected to case.
10.
Beyond r maximum, TW shall be held for a minimum length of 0.011 inch (0.28 mm).
11.
Symbol r applied to both inside corners of tab.
FIGURE 1. Physical dimensions (TO-39) - Continued.
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