- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄353878 > JANS2N3634 (MICROSEMI CORP-LAWRENCE) PNP SILICON AMPLIFIER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | JANS2N3634 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP SILICON AMPLIFIER TRANSISTOR |
| 中文描述： | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封裝： | TO-39, 3 PIN |
| 文件頁(yè)數(shù)： | 6/20頁(yè) |
| 文件大?。?/td> | 128K |
| 代理商： | JANS2N3634 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)當(dāng)前第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)
MIL-PRF-19500/560E
14
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
Min
Max
Subgroup 2 - continued
Emitter to base, cutoff
current
3061
Bias condition D; VEB = 6.0 V dc
IEBO
100
A dc
Forward - current
transfer ratio
3076
VCE = 2.0 V dc; IC = 0.5 A dc, pulsed
(see 4.5.1)
hFE1
60
Forward - current
transfer ratio
3076
VCE = 2.0 V dc; IC = 2.0 A dc; pulsed
(see 4.5.1)
hFE2
60
240
Forward - current
transfer ratio
3076
VCE = 2.0 V dc; IC = 5.0 A dc; pulsed
(see 4.5.1)
hFE3
40
Collector to emitter
voltage (saturated)
3071
IC = 2.0 A dc; IB = 0.2 A dc; pulsed
(see 4.5.1)
VCE(SAT)1
0.7
V dc
Collector to emitter
voltage (saturated)
3071
IC = 5.0 A dc; IB = 0.5 A dc; pulsed
(see 4.5.1)
VCE(SAT)2
1.2
V dc
Base to emitter voltage
(saturated)
3066
Test condition A; IC = 2.0 A dc;
IB = 0.2 A dc; pulsed (see 4.5.1)
VBE(SAT)1
1.2
V dc
Base to emitter voltage
(saturated)
3066
Test condition A; IC = 5.0 A dc;
IB = 0.5 A dc; pulsed (see 4.5.1)
VBE(SAT)2
1.8
V dc
Subgroup 3
High - temperature
operation
TA = +150°C
Collector to emitter
cutoff current
3041
Bias condition A; VCE = 90 V dc; VBE
= 1.5 V dc;
ICEX2
1.0
mA dc
Low-temperature
operation
TA = -55°C
Forward - current
transfer ratio
3076
VCE = 2.0 V dc; IC = 2.0 A dc; Pulsed
(see 4.5.1)
hFE4
12
See footnote at end of table.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANS2N3634L | PNP SILICON AMPLIFIER TRANSISTOR |
| JANS2N3635 | PNP SILICON AMPLIFIER TRANSISTOR |
| JANS2N3635L | PNP SILICON AMPLIFIER TRANSISTOR |
| JANS2N3636 | PNP SILICON AMPLIFIER TRANSISTOR |
| JANS2N3636L | PNP SILICON AMPLIFIER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANS2N3634L | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
| JANS2N3634UB | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
| JANS2N3635 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 140V 1A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
| JANS2N3635L | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 140V 1A 3-Pin TO-5 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
| JANS2N3635UB | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 140V 1A 3-Pin UB 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。