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參數(shù)資料
| 型號： | JANS2N3636 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP SILICON AMPLIFIER TRANSISTOR |
| 中文描述： | 1000 mA, 175 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封裝： | TO-39, 3 PIN |
| 文件頁數(shù)： | 12/20頁 |
| 文件大小： | 128K |
| 代理商： | JANS2N3636 |
MIL-PRF-19500/560E
2
1.4 Primary electrical characteristics TA = +25°C. (Unless otherwise indicated, applies to all devices.) - Continued.
Switching
Limits
|hFE|
f = 10 MHz
VCE = 10 V dc
IC = 0.5 A dc
Cobo
VCE = 10 V dc
IE = 0
100 kHz
≤ f ≤
1 MHz
See figure 4
ton
See figure 5
toff
VCE(SAT)1
IC = 2.0 A dc
IB = 0.2 A dc
(1)
VBE(SAT)1
IC = 2.0 A dc
IB = 0.2 A dc
(1)
pF
s
V dc
Min
3.0
Max
15.0
250
0.2
2.2
0.7
1.2
(1) Pulsed (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
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PDF描述 |
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| JANS2N3636L | PNP SILICON AMPLIFIER TRANSISTOR |
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| JANS2N3637L | PNP SILICON AMPLIFIER TRANSISTOR |
| JANTX1N6165AUS | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:AC; No. of Contacts:3; Connector Shell Size:14S; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight; Circular Contact Gender:Pin |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANS2N3636L | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 175V 1A 3-Pin TO-5 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
| JANS2N3636UB | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 175V 1A 3-Pin UB 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
| JANS2N3637 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 175V 1A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
| JANS2N3637L | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 175V 1A 3-Pin TO-5 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 175V 1A 3PIN TO-5 - Waffle Pack 制造商:Microsemi 功能描述:Trans GP BJT PNP 175V 1A 3-Pin TO-5 |
| JANS2N3637UB | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
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