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參數(shù)資料
| 型號： | JANS2N3636 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP SILICON AMPLIFIER TRANSISTOR |
| 中文描述： | 1000 mA, 175 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封裝： | TO-39, 3 PIN |
| 文件頁數(shù)： | 2/20頁 |
| 文件大?。?/td> | 128K |
| 代理商： | JANS2N3636 |
MIL-PRF-19500/560E
10
4.3 Screening (JAN, JANTX, JANTXV and JANS levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see
Measurements
MIL-PRF-19500)
JANS level
JANTX and JANTXV levels
*
3C
Thermal impedance method 3131 of
MIL-STD-750.
Thermal impedance method 3131 of
MIL-STD-750.
9
ICBO1 and hFE2
Not applicable
11
ICBO1; hFE2,
I
CBO1 = ± 100 percent of initial value
or 1.0
A dc, whichever is greater;
h
FE2 = ± 15 percent
ICBO1 and hFE2
12
See 4.3.1
13
Subgroups 2 and 3 of table I herein;
I
CBO1 = ± 100 percent of initial value
or 1.0
A dc, whichever is greater;
h
FE2 = ± 15 percent
Subgroup 2 of table I herein;
I
CBO1 = ± 100 percent of initial value or
1.0
A dc, whichever is greater;
h
FE2 = ± 15 percent.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = Room ambient as defined in the
general requirements of 4.5 of MIL-STD-750. Power shall be applied to the device to achieve TJ = minimum 175°C
and minimum power dissipation of PD = 75 percent PT max as defined in 1.3.
* 4.3.2 Screening for JANHC and JANKC. Screening for JANHC and JANKC die shall be in accordance with
MIL-PRF-19500 Discrete Semiconductor Die/Chip Lot Acceptance. Burn-in duration for JANKC level follows JANS
requirements; the JANHC follows JANTX requirements.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table V of MIL-PRF-19500
and table I herein. Electrical measurements (end-points) requirements shall be in accordance with group A,
subgroup 2 herein.
相關PDF資料 |
PDF描述 |
|---|---|
| JANS2N3636L | PNP SILICON AMPLIFIER TRANSISTOR |
| JANS2N3637 | Circular Connector; MIL SPEC:MIL-C-5015 A/B/C; Body Material:Aluminum Alloy; Series:97-3101A; No. of Contacts:4; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle RoHS Compliant: No |
| JANS2N3637L | PNP SILICON AMPLIFIER TRANSISTOR |
| JANTX1N6165AUS | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:AC; No. of Contacts:3; Connector Shell Size:14S; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight; Circular Contact Gender:Pin |
| JANS1N4099 | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| JANS2N3636L | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 175V 1A 3-Pin TO-5 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
| JANS2N3636UB | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 175V 1A 3-Pin UB 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
| JANS2N3637 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 175V 1A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
| JANS2N3637L | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 175V 1A 3-Pin TO-5 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 175V 1A 3PIN TO-5 - Waffle Pack 制造商:Microsemi 功能描述:Trans GP BJT PNP 175V 1A 3-Pin TO-5 |
| JANS2N3637UB | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR - Waffle Pack |
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