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參數(shù)資料
| 型號： | JANSR2N7616UBC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 800 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | HERMETIC SELALED, UBC-4 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 217K |
| 代理商： | JANSR2N7616UBC |
2
www.irf.com
Pre-Irradiation
IRHLUB770Z4, JANSR2N7616UB
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
—
0.8
ISM
Pulse Source Current (Body Diode)
—
3.2
VSD Diode Forward Voltage
—
1.2
V
Tj = 25°C, IS = 0.8A, VGS = 0V
trr
Reverse Recovery Time
—
78
ns
Tj = 25°C, IF = 0.8A, di/dt ≤ 100A/s
QRR Reverse Recovery Charge
—
75
nC
VDD ≤ 25V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
RthJA
Junction-to-Ambient
—
200
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
60
—
V
VGS = 0V, ID = 250A
BVDSS/TJ Temperature Coefficient of Breakdown —
0.07
—
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
—
0.68
VGS = 4.5V, ID = 0.5A
Resistance
VGS(th)
Gate Threshold Voltage
1.0
—
2.0
V
VDS = VGS, ID = 250A
VGS(th)/TJ Gate Threshold Voltage Coefficient
—
-4.04
—
mV/°C
gfs
Forward Transconductance
0.23
—
S
VDS = 10V, IDS = 0.5A
IDSS
Zero Gate Voltage Drain Current
—
1.0
VDS= 48V ,VGS=0V
——
10
VDS = 48V,
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
—
100
VGS = 10V
IGSS
Gate-to-Source Leakage Reverse
—
-100
VGS = -10V
Qg
Total Gate Charge
—
3.6
VGS = 4.5V, ID = 0.8A
Qgs
Gate-to-Source Charge
—
1.5
nC
VDS = 30V
Qgd
Gate-to-Drain (‘Miller’) Charge
—
1.8
td(on)
Turn-On Delay Time
—
8.0
VDD = 30V, ID = 0.8A,
tr
Rise Time
—
24
VGS = 5.0V, RG = 24
td(off)
Turn-Off Delay Time
—
30
tf
Fall Time
—
13
LS + LD
Total Inductance
—
8.4
—
Ciss
Input Capacitance
—
166
—
VGS = 0V, VDS = 25V
Coss
Output Capacitance
—
42
—
pF
f = 100KHz
Crss
Reverse Transfer Capacitance
—
3.5
—
nA
nH
ns
A
Measured from the center of
drain pad to center of source pad
Rg
Gate Resistance
14
f = 1.0MHz, open drain
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