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參數(shù)資料
| 型號： | JANSR2N7616UBC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 800 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | HERMETIC SELALED, UBC-4 |
| 文件頁數(shù)： | 9/11頁 |
| 文件大小： | 217K |
| 代理商： | JANSR2N7616UBC |
www.irf.com
7
IRHLUB770Z4, JANSR2N7616UB
Pre-Irradiation
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
0.1
1
10
100
1000
T
he
rm
al
R
es
po
ns
e
(
Z
th
JA
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
P
t
DM
1
2
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
0
10
20
30
40
50
60
E
A
S
,S
in
gl
e
P
ul
se
A
va
la
nc
he
E
ne
rg
y
(m
J)
ID
TOP
0.4A
0.5A
BOTTOM 0.8A
0.1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1
00s
DC
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