參數(shù)資料
型號(hào)： JANTXV2N2945A
英文描述： TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 100MA I(C) | TO-46
中文描述： 晶體管|晶體管|進(jìn)步黨| 20V的五（巴西）總裁| 100mA的一（c）|的TO - 46
文件頁(yè)數(shù)： 16/21頁(yè)
文件大?。?/td> 137K
代理商： JANTXV2N2945A
MIL-PRF-19500/368F
4
Symbol
Dimensions
Notes
Inches
Millimeters
Min
Max
Min
Max
CD
.305
.335
7.75
8.51
CH
.240
.260
6.10
6.60
HD
.335
.370
8.51
9.40
LD
.016
.021
0.41
0.53
3, 10
LL
See notes 10, 12, and 13
L1
.050
1.27
11
LU
.016
.019
0.41
0.48
4, 10
M
.1414 Nom
3.591 Nom
7
N
.0707 Nom
1.796 Nom
7
P
.100
2.54
5
Q
6
TL
.029
.045
0.74
1.14
9
TW
.028
.034
0.71
0.86
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Measured in the zone beyond .250 inch (6.35 mm) from the seating plane.
4. Measured in the zone .50 inch (1.27 mm) from the seating plane.
5. Variations on dimension CD in this zone shall not exceed .010 inch (0.25 mm).
6. Outline in this zone is not controlled.
7. When measured in a gauging plane .054 +.001, -.000 inch (1.37 +0.03, - 0.00 mm) below the seating plane of
the transistor, maximum diameter leads shall be within .007 inch (0.18 mm) of their true location relative to a
maximum width tab. Smaller diameter leads shall fall within the outline of the maximum diameter lead
tolerance.
8. The collector shall be electrically connected to the case.
9. Measured from the maximum diameter of the actual device.
10. All three leads (see 3.4.1).
11. Diameter of leads in this zone is not controlled.
12. For transistor types 2N3439 and 2N3440, L = .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm)
maximum.
13. For transistor types 2N3439L and 2N3440L, L = 1.500 inches (38.10 mm) minimum, and 1.750 inches
(44.45 mm) maximum.
FIGURE 1. Physical dimensions - Continued.
相關(guān)PDF資料
PDF描述
JANTXV2N2946A TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 100MA I(C) | TO-46
JANTXV2N3227 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-18
JANTXV2N3227UB BJT
JANTXV2N3250A TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18
JANTXV2N3251A TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JANTXV2N2946A 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 35V 0.1A 3-Pin TO-46 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR (PNP) - Bulk
JANTXV2N3019 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 80V 1A 3-Pin TO-39 制造商:ON Semiconductor 功能描述:Trans GP BJT NPN 80V 1A 3-Pin TO-39 Bulk 制造商:Aeroflex / Metelics 功能描述:SMALL SIGNAL TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk 制造商:ON Semiconductor 功能描述:MILITARY TRANSISTOR - Bulk 制造商:ON Semiconductor 功能描述:JANTXV2N3019
JANTXV2N3019S 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 80V 1A 3-Pin TO-39 制造商:ON Semiconductor 功能描述:Trans GP BJT NPN 80V 1A 3-Pin TO-39 Bulk 制造商:Aeroflex / Metelics 功能描述:SMALL SIGNAL TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk 制造商:ON Semiconductor 功能描述:MILITARY TRANSISTOR - Bulk 制造商:ON Semiconductor 功能描述:JANTXV2N3019S 制造商:Microsemi 功能描述:Trans GP BJT NPN 80V 1A 3-Pin TO-39
JANTXV2N3027 制造商:Microsemi Corporation 功能描述:Thyristor SCR 30V 8A 3-Pin TO-18 制造商:Microsemi Corporation 功能描述:SILICON CONTROLLED RECTIFIER - Bulk
JANTXV2N3028 制造商:Microsemi Corporation 功能描述:Thyristor SCR 60V 8A 3-Pin TO-18 制造商:Microsemi Corporation 功能描述:SILICON CONTROLLED RECTIFIER - Bulk
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*