參數(shù)資料
型號(hào)： JANTXV2N2945A
英文描述： TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 100MA I(C) | TO-46
中文描述： 晶體管|晶體管|進(jìn)步黨| 20V的五（巴西）總裁| 100mA的一（c）|的TO - 46
文件頁(yè)數(shù)： 4/21頁(yè)
文件大?。?/td> 137K
代理商： JANTXV2N2945A
MIL-PRF-19500/368F
12
* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified in table III herein. Electrical
measurements (end-points) shall be in accordance with table I, group A, subgroup 2 herein. Delta measurements
shall be in accordance with the steps of 4.5.3.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of
MIL-STD-750.
4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method 3131
of MIL-STD-750. The following conditions shall apply:
a.
Collector current magnitude during power application shall be 150 mA dc for RθJC.
b.
Collector emitter voltage magnitude shall be 10 V dc.
c.
Reference temperature measuring point shall be the case.
d.
Reference temperature measuring point shall be +25
°C ≤ T
R ≤ +35°C. The chosen reference
temperature shall be recorded before the test is started.
e.
Mounting arrangement shall be with heat sink to case for RθJC.
Maximum limit shall be RθJC = 35°C/W.
* 4.5.3 Delta requirements. Delta requirements shall be as specified below:
Step
Inspection
MIL-STD-750
Symbol
Unit
Method
Conditions
1
Collector-base cutoff
current
3036
Bias condition D,
VCB = 360 V dc for 2N3439, 2N3439L,
2N3439UA
VCB = 250 V dc for 2N3440, 2N3440L,
2N3440UA
ICB01
(1)
100 percent of initial
value or 200 nA dc,
whichever is greater.
2
Forward current
transfer ratio
3076
VCE = 10 V dc;
IC = 20 mA dc;
pulsed see 4.5.1
hFE1
(1)
±15 percent change
from initial reading.
(1) Devices which exceed the table I, group A limits for this test shall not be accepted.
相關(guān)PDF資料
PDF描述
JANTXV2N2946A TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 100MA I(C) | TO-46
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JANTXV2N3250A TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-18
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JANTXV2N3019 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 80V 1A 3-Pin TO-39 制造商:ON Semiconductor 功能描述:Trans GP BJT NPN 80V 1A 3-Pin TO-39 Bulk 制造商:Aeroflex / Metelics 功能描述:SMALL SIGNAL TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk 制造商:ON Semiconductor 功能描述:MILITARY TRANSISTOR - Bulk 制造商:ON Semiconductor 功能描述:JANTXV2N3019
JANTXV2N3019S 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 80V 1A 3-Pin TO-39 制造商:ON Semiconductor 功能描述:Trans GP BJT NPN 80V 1A 3-Pin TO-39 Bulk 制造商:Aeroflex / Metelics 功能描述:SMALL SIGNAL TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk 制造商:ON Semiconductor 功能描述:MILITARY TRANSISTOR - Bulk 制造商:ON Semiconductor 功能描述:JANTXV2N3019S 制造商:Microsemi 功能描述:Trans GP BJT NPN 80V 1A 3-Pin TO-39
JANTXV2N3027 制造商:Microsemi Corporation 功能描述:Thyristor SCR 30V 8A 3-Pin TO-18 制造商:Microsemi Corporation 功能描述:SILICON CONTROLLED RECTIFIER - Bulk
JANTXV2N3028 制造商:Microsemi Corporation 功能描述:Thyristor SCR 60V 8A 3-Pin TO-18 制造商:Microsemi Corporation 功能描述:SILICON CONTROLLED RECTIFIER - Bulk
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