參數(shù)資料
型號(hào)： JANTXV2N6211
英文描述： TRANSISTOR | BJT | PNP | 225V V(BR)CEO | 2A I(C) | TO-66
中文描述： 晶體管|晶體管|進(jìn)步黨| 225V五（巴西）總裁|甲一（c）|至66
文件頁(yè)數(shù)： 18/19頁(yè)
文件大?。?/td> 103K
代理商： JANTXV2N6211
MIL-PRF-19500/512E
8
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL-PRF-19500 and on figures 1, 2, 3, 4, and 5 herein.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750 and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characterics are as specified in 1.3, 1.4 and table I herein.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and
4.4.3 herein.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a.
Qualification inspection (see 4.2).
b.
Screening (see 4.3).
c.
Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
相關(guān)PDF資料
PDF描述
JANTXV2N6212 TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 2A I(C) | TO-66
JANTXV2N6213 TRANSISTOR | BJT | PNP | 350V V(BR)CEO | 2A I(C) | TO-66
JANTXV2N6249 TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 10A I(C) | TO-3
JANTXV2N6250 TRANSISTOR | BJT | NPN | 275V V(BR)CEO | 10A I(C) | TO-3
JANTXV2N6251 TRANSISTOR | BJT | NPN | 275V V(BR)CEO | 10A I(C) | TO-3
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JANTXV2N6212 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 300V 2A 3-Pin(2+Tab) TO-66 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 300V 2A 3PIN TO-66 - Bulk
JANTXV2N6213 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 350V 2A 3-Pin(2+Tab) TO-66 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 350V 2A 3PIN TO-66 - Bulk
JANTXV2N6249 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 200V 10A 3-Pin(2+Tab) TO-3 制造商:Aeroflex / Metelics 功能描述:NPN POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Bulk
JANTXV2N6249T1 功能描述:TRANS NPN 200V 10A TO-3 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/510 包裝:散裝 零件狀態(tài):在售 晶體管類(lèi)型:NPN 電流 - 集電極（Ic）（最大值）:10A 電壓 - 集射極擊穿（最大值）:200V 不同?Ib，Ic 時(shí)的?Vce 飽和值（最大值）:1.5V @ 1A，10A 電流 - 集電極截止（最大值）:1mA 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:10 @ 10A，3V 功率 - 最大值:6W 頻率 - 躍遷:- 工作溫度:-65°C ~ 200°C（TJ） 安裝類(lèi)型:通孔 封裝/外殼:TO-254-3，TO-254AA（直引線） 供應(yīng)商器件封裝:TO-254AA 標(biāo)準(zhǔn)包裝:1
JANTXV2N6250 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 275V 10A 3-Pin(2+Tab) TO-3 制造商:Aeroflex / Metelics 功能描述:NPN POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Bulk
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