參數(shù)資料
型號(hào)： JANTXV2N6211
英文描述： TRANSISTOR | BJT | PNP | 225V V(BR)CEO | 2A I(C) | TO-66
中文描述： 晶體管|晶體管|進(jìn)步黨| 225V五（巴西）總裁|甲一（c）|至66
文件頁(yè)數(shù)： 2/19頁(yè)
文件大?。?/td> 103K
代理商： JANTXV2N6211
MIL-PRF-19500/512E
10
4.3.2 Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance with
method 3131 of MIL-STD-750.
a.
IM measurement current ...................... 5 mA.
b.
IH forward heating current ................... 200 mA (min).
c.
tH heating time..................................... 25 - 30 ms.
d.
tmd measurement delay time .............. 60 s max.
e.
VCE collector-emitter voltage .............. 10 V dc minimum( same as VH ).
f.
VH collector-emitter heating voltage ... 10 V ( minimum ).
g.
tSW sample window time .................... 10 s ( maximum ).
The maximum limit for ZθJX under these test conditions are ZθJX (max) = 60°C/W. (UA and UB); 67°C/W (2N4029
and 2N4033).
4.3.3 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows
JANS requirements; the JANHC follows JANTX requirements.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1
Group A inspection. Group A inspection shall be conducted in accordance with appendix E, table V of
MIL-PRF-19500 and table I herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements
(end-points) and delta requirements shall be in accordance with group A, subgroup 2 and 4.5.2 herein: delta
requirements only apply to subgroups B4, and B5. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing.
Electrical measurements (end-points) and delta requirements for JAN, JANTX, and JANTXV shall be after each step
in 4.4.2.2 and shall be in accordance with group A, subgroup 2 and 4.5.2 herein.
4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup
Method
Condition
B4
1037
VCB = 10 V dc.
B5
1027
VCB = 10 – 20 V dc; PD ≥ 75 percent of maximum rated PT (see 1.3). Option 1:
96 hours min, sample size in accordance with table VIa of MIL-PRF-19500,
adjust TA to achieve TJ = +275°C minimum. Option 2: 216 hours., sample size
= 45, c = 0; adjust TA to achieve TJ = +225°C minimum.
相關(guān)PDF資料
PDF描述
JANTXV2N6212 TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 2A I(C) | TO-66
JANTXV2N6213 TRANSISTOR | BJT | PNP | 350V V(BR)CEO | 2A I(C) | TO-66
JANTXV2N6249 TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 10A I(C) | TO-3
JANTXV2N6250 TRANSISTOR | BJT | NPN | 275V V(BR)CEO | 10A I(C) | TO-3
JANTXV2N6251 TRANSISTOR | BJT | NPN | 275V V(BR)CEO | 10A I(C) | TO-3
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JANTXV2N6212 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 300V 2A 3-Pin(2+Tab) TO-66 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 300V 2A 3PIN TO-66 - Bulk
JANTXV2N6213 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 350V 2A 3-Pin(2+Tab) TO-66 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 350V 2A 3PIN TO-66 - Bulk
JANTXV2N6249 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 200V 10A 3-Pin(2+Tab) TO-3 制造商:Aeroflex / Metelics 功能描述:NPN POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Bulk
JANTXV2N6249T1 功能描述:TRANS NPN 200V 10A TO-3 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/510 包裝:散裝 零件狀態(tài):在售 晶體管類型:NPN 電流 - 集電極（Ic）（最大值）:10A 電壓 - 集射極擊穿（最大值）:200V 不同?Ib，Ic 時(shí)的?Vce 飽和值（最大值）:1.5V @ 1A，10A 電流 - 集電極截止（最大值）:1mA 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:10 @ 10A，3V 功率 - 最大值:6W 頻率 - 躍遷:- 工作溫度:-65°C ~ 200°C（TJ） 安裝類型:通孔 封裝/外殼:TO-254-3，TO-254AA（直引線） 供應(yīng)商器件封裝:TO-254AA 標(biāo)準(zhǔn)包裝:1
JANTXV2N6250 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 275V 10A 3-Pin(2+Tab) TO-3 制造商:Aeroflex / Metelics 功能描述:NPN POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Bulk
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