- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄353847 > JANTXV2N6898 TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE PDF資料下載
參數(shù)資料
| 型號(hào)： | JANTXV2N6898 |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE |
| 中文描述： | 晶體管| MOSFET的| P通道| 100V的五（巴西）直|第25A條（?。﹟對(duì)204AE |
| 文件頁(yè)數(shù)： | 19/19頁(yè) |
| 文件大小： | 103K |
| 代理商： | JANTXV2N6898 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)當(dāng)前第19頁(yè)
MIL-PRF-19500/512E
9
4.3 Screening (JANS, JANTX and JANTXV levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Measurement
Screen (see
table IV of
MIL-PRF-19500)
JANS level
JANTX and JANTXV levels
(1) 3c
Required (see 4.3.2)
9
hFE2, ICBO2
Not applicable
11
ICBO2; hFE2; ICBO2 = 100 percent of
initial value or 2 nA dc, whichever is greater;
hFE2 = 15 percent change from initial value.
ICBO2 and hFE2
12
See 4.3.1
13
Subgroups 2 and 3 of table I herein;
ICBO2 = 100 percent of initial value
or 2 nA dc, whichever is greater;
hFE2 = 15 percent change from initial value.
Subgroup 2 of table I herein;
ICBO2 = 100 percent of initial value
or 2 nA dc, whichever is greater;
hFE2 = 15 percent change from initial value.
(1) Thermal impedance may be performed any time after sealing provided temperature cycling is performed in
accordance with MIL-PRF-19500, screen 3 prior to this thermal test.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = Room ambient as defined in 4.5 of
MIL-STD-750; VCB = 10-20 V dc; power shall be applied to achieve TJ = 135°C minimum and a minimum power
dissipation = 75 percent of maximum rated PT (see 1.3). NOTE: No heat sink or forced air cooling on the devices
shall be permitted.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANTXV2N6902 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 12A I(D) | TO-204AA |
| JANTXV2N6904 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-204AA |
| JANTXV2N6987 | TRANSISTOR | BJT | ARRAY | INDEPENDENT | 60V V(BR)CEO | 600MA I(C) | TO-116 |
| JANTXV2N6987U | TRANSISTOR | BJT | ARRAY | INDEPENDENT | 60V V(BR)CEO | 600MA I(C) | LLCC |
| JANTXV2N918UB | BJT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANTXV2N6901 | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 100V 1.69A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:2N6901JANTXV - Bulk |
| JANTXV2N6987 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 0.6A 14PIN TO-116 - Bulk 制造商:Microsemi Corporation 功能描述:TRANS PNP QUAD 60V 600MA TO116 |
| JANTXV2N6987U | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 0.6A 20LLCC - Bulk |
| Jantxv2N6988 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 0.6A 14PIN FLATPACK - Bulk 制造商:Microsemi Corporation 功能描述:TRANS PNP QUAD |
| Jantxv2N6989 | 制造商:Microsemi Corporation 功能描述:NPN QUAD TRANSISTOR (NPNQ) - Bulk 制造商:Microsemi Corporation 功能描述:TRANS NPN QUAD 50V 800MA TO116 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。