參數(shù)資料
型號(hào): JANTXV2N6898
英文描述: TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE
中文描述: 晶體管| MOSFET的| P通道| 100V的五(巴西)直|第25A條(?。﹟對(duì)204AE
文件頁(yè)數(shù): 2/19頁(yè)
文件大小: 103K
代理商: JANTXV2N6898
MIL-PRF-19500/512E
10
4.3.2 Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance with
method 3131 of MIL-STD-750.
a.
IM measurement current ...................... 5 mA.
b.
IH forward heating current ................... 200 mA (min).
c.
tH heating time..................................... 25 - 30 ms.
d.
tmd measurement delay time .............. 60 s max.
e.
VCE collector-emitter voltage .............. 10 V dc minimum( same as VH ).
f.
VH collector-emitter heating voltage ... 10 V ( minimum ).
g.
tSW sample window time .................... 10 s ( maximum ).
The maximum limit for ZθJX under these test conditions are ZθJX (max) = 60°C/W. (UA and UB); 67°C/W (2N4029
and 2N4033).
4.3.3 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows
JANS requirements; the JANHC follows JANTX requirements.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1
Group A inspection. Group A inspection shall be conducted in accordance with appendix E, table V of
MIL-PRF-19500 and table I herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements
(end-points) and delta requirements shall be in accordance with group A, subgroup 2 and 4.5.2 herein: delta
requirements only apply to subgroups B4, and B5. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing.
Electrical measurements (end-points) and delta requirements for JAN, JANTX, and JANTXV shall be after each step
in 4.4.2.2 and shall be in accordance with group A, subgroup 2 and 4.5.2 herein.
4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup
Method
Condition
B4
1037
VCB = 10 V dc.
B5
1027
VCB = 10 – 20 V dc; PD ≥ 75 percent of maximum rated PT (see 1.3). Option 1:
96 hours min, sample size in accordance with table VIa of MIL-PRF-19500,
adjust TA to achieve TJ = +275°C minimum. Option 2: 216 hours., sample size
= 45, c = 0; adjust TA to achieve TJ = +225°C minimum.
相關(guān)PDF資料
PDF描述
JANTXV2N6902 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 12A I(D) | TO-204AA
JANTXV2N6904 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-204AA
JANTXV2N6987 TRANSISTOR | BJT | ARRAY | INDEPENDENT | 60V V(BR)CEO | 600MA I(C) | TO-116
JANTXV2N6987U TRANSISTOR | BJT | ARRAY | INDEPENDENT | 60V V(BR)CEO | 600MA I(C) | LLCC
JANTXV2N918UB BJT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JANTXV2N6901 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 100V 1.69A 3-Pin TO-39 制造商:Microsemi Corporation 功能描述:2N6901JANTXV - Bulk
JANTXV2N6987 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 0.6A 14PIN TO-116 - Bulk 制造商:Microsemi Corporation 功能描述:TRANS PNP QUAD 60V 600MA TO116
JANTXV2N6987U 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 0.6A 20LLCC - Bulk
Jantxv2N6988 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 60V 0.6A 14PIN FLATPACK - Bulk 制造商:Microsemi Corporation 功能描述:TRANS PNP QUAD
Jantxv2N6989 制造商:Microsemi Corporation 功能描述:NPN QUAD TRANSISTOR (NPNQ) - Bulk 制造商:Microsemi Corporation 功能描述:TRANS NPN QUAD 50V 800MA TO116