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參數(shù)資料
| 型號： | JANTXV2N7237U |
| 英文描述： | -200V Single P-Channel Hi-Rel MOSFET in a SMD-1 package |
| 中文描述： | - 200伏單P溝道高可靠性的貼片MOSFET的- 1封裝 |
| 文件頁數(shù)： | 16/21頁 |
| 文件大?。?/td> | 137K |
| 代理商： | JANTXV2N7237U |
MIL-PRF-19500/368F
4
Symbol
Dimensions
Notes
Inches
Millimeters
Min
Max
Min
Max
CD
.305
.335
7.75
8.51
CH
.240
.260
6.10
6.60
HD
.335
.370
8.51
9.40
LD
.016
.021
0.41
0.53
3, 10
LL
See notes 10, 12, and 13
L1
.050
1.27
11
LU
.016
.019
0.41
0.48
4, 10
M
.1414 Nom
3.591 Nom
7
N
.0707 Nom
1.796 Nom
7
P
.100
2.54
5
Q
6
TL
.029
.045
0.74
1.14
9
TW
.028
.034
0.71
0.86
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Measured in the zone beyond .250 inch (6.35 mm) from the seating plane.
4. Measured in the zone .50 inch (1.27 mm) from the seating plane.
5. Variations on dimension CD in this zone shall not exceed .010 inch (0.25 mm).
6. Outline in this zone is not controlled.
7. When measured in a gauging plane .054 +.001, -.000 inch (1.37 +0.03, - 0.00 mm) below the seating plane of
the transistor, maximum diameter leads shall be within .007 inch (0.18 mm) of their true location relative to a
maximum width tab. Smaller diameter leads shall fall within the outline of the maximum diameter lead
tolerance.
8. The collector shall be electrically connected to the case.
9. Measured from the maximum diameter of the actual device.
10. All three leads (see 3.4.1).
11. Diameter of leads in this zone is not controlled.
12. For transistor types 2N3439 and 2N3440, L = .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm)
maximum.
13. For transistor types 2N3439L and 2N3440L, L = 1.500 inches (38.10 mm) minimum, and 1.750 inches
(44.45 mm) maximum.
FIGURE 1. Physical dimensions - Continued.
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| JANTXV2N7369 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 80V 10A 3-Pin(3+Tab) TO-254 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 80V 10A 3PIN TO-254 - Bulk |
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