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參數(shù)資料
| 型號： | JANTXV2N7373 |
| 英文描述： | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-254AA |
| 中文描述： | 晶體管|晶體管|叩| 80V的五（巴西）總裁| 5A條一（c）|至254AA |
| 文件頁數(shù)： | 1/19頁 |
| 文件大小： | 103K |
| 代理商： | JANTXV2N7373 |
MIL-PRF-19500/512E
23 July 2001
SUPERSEDING
MIL-PRF-19500/512D
14 July 2000
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING
TYPES 2N4029, 2N4033, 2N4033UA, 2N4033UB, JAN, JANTX, JANTXV, JANS AND
JANKC2N4033 AND JANHC2N4033
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP silicon transistors designed for use in
high speed switching and driver applications. Four levels of product assurance are provided for each encapsulated
device type and two levels of product assurance for each unencapsulated specified as in MIL-PRF-19500.
1.2 Physical dimensions. See figures 1 (TO-18), figure 2 (TO-39), figure 3 and figure 4 (surface mount) ) and
figure 5 (JANKC and JANHC) herein.
1.3 Maximum ratings.
PT (1)
TA = +25°C
PT (2)
TA = +25°C
PT (3)
TA = +25°C
PT (1)
TA = +25°C
VCBO
VCEO
VEBO
IC
TOP and TSTG
2N4029
2N4033
2N4033UA
2N4033UB
W
0.5
W
0.8
W
0.65
W
0.5
V dc
80
V dc
80
V dc
5.0
A dc
1.0
°C
-65 to +200
R
θJA
R
θJA
R
θJA
2N4029
2N4033UB
2N4033
2N4033UA
°C/W
325
°C/W
175
°C/W
210
(1) Derate linearly 3.08 mW/
°C above TA = +37.5°C.
(2) Derate linearly 5.7 mW/
°C above TA = +60°C.
(3) Derate linearly 4.76 mW/
°C above TA = +63.5°C.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 23 October 2001.
INCH-POUND
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC,
Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANTXV2N918 | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Bulk |
| JANTXV2N918UB | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 15V 0.05A 3-Pin UB 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Waffle Pack |
| JANTXV2N930 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 45V 0.03A 3-Pin TO-18 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk 制造商:Microsemi Corporation 功能描述:NPN LOW POWER SILICON TRANSISTOR |
| JANTXV2N930UB | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Waffle Pack |
| JANTXV4N22 | 功能描述:Optoisolator Transistor with Base Output 1000VDC 1 Channel TO-78-6 制造商:tt electronics/optek technology 系列:- 包裝:散裝 零件狀態(tài):有效 通道數(shù):1 電壓 - 隔離:1000VDC 電流傳輸比（最小值）:25% @ 10mA 電流傳輸比（最大值）:- 打開 / 關(guān)閉時間（典型值）:- 上升/下降時間（典型值）:20μs，20μs（最大） 輸入類型:DC 輸出類型:有基極的晶體管 電壓 - 輸出（最大值）:40V 電流 - 輸出/通道:50mA 電壓 - 正向（Vf）（典型值）:1.5V（最大） 電流 - DC 正向（If）:40mA Vce 飽和值（最大值）:300mV 工作溫度:-55°C ~ 125°C 安裝類型:通孔 封裝/外殼:TO-78-6 金屬罐 供應(yīng)商器件封裝:TO-78-6 標準包裝:1 |
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