- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄353812 > JANTXV2N7372 TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-254AA PDF資料下載
參數(shù)資料
| 型號(hào)： | JANTXV2N7372 |
| 英文描述： | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-254AA |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 80V的五（巴西）總裁| 5A條一（c）|至254AA |
| 文件頁(yè)數(shù)： | 4/19頁(yè) |
| 文件大?。?/td> | 103K |
| 代理商： | JANTXV2N7372 |
第1頁(yè)第2頁(yè)第3頁(yè)當(dāng)前第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)
MIL-PRF-19500/512E
12
4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any
inspection lot containing the intended package type and lead finish procured to the same specification which is
submitted to and passes group A tests for conformance inspection. When the final lead finish is solder or any
plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of
final lead finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be
considered as complying with the requirements for that subgroup.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of
MIL-STD-750.
4.5.2 Delta requirements. Delta requirements shall be as follows: 3/ 4/ 5/ 6/
Step
Inspection
MIL-STD-750
Symbol
Limit
Unit
1/ 2/
Method
Conditions
1.
Collector-base cutoff
current
3036
Bias condition D,
VCB = 60 V dc
ICB02 (1)
100 percent of initial
value or 5 nA dc,
whichever is greater.
2.
Forward current
transfer ratio
3076
VCE = 5 V dc;
IC = 100 mA dc;
pulsed see 4.5.1
hFE2 (1)
±25 percent change
from initial reading.
1/ See MIL-PRF-19500 for sampling plan.
2/ Devices which exceed the group A limits for this test shall not be acceptable.
3/ The delta measurements for table VIa (JANS) of MIL-PRF-19500 are as follows:
a. Subgroup 3, see table II herein, step 2.
b. Subgroups 4 and 5, see table II herein, step 2.
4/ The delta measurements for table VIb (JANTX and JANTXV) of MIL-PRF-19500 are as follows:
a. Subgroup 2, see table II herein, step 1.
b. Subgroups 3 and 6, see table II herein, step 1.
5/ The delta measurements for table VII of MIL-PRF-19500 are as follows:
a. Subgroup 6, see table II herein, step 1.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANTXV2N7373 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-254AA |
| JANTXV2N918 | TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-72 |
| JCLFCMEN-15.000MHZ | Voltage-Controlled Oscillator |
| JCLFCMEN-155.520MHZ | Voltage-Controlled Oscillator |
| JCLFCMEN-170.000MHZ | Voltage-Controlled Oscillator |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANTXV2N7373 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 80V 5A 3-Pin(3+Tab) TO-254 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Bulk |
| JANTXV2N918 | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR - Bulk |
| JANTXV2N918UB | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 15V 0.05A 3-Pin UB 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Waffle Pack |
| JANTXV2N930 | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 45V 0.03A 3-Pin TO-18 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Bulk 制造商:Microsemi Corporation 功能描述:NPN LOW POWER SILICON TRANSISTOR |
| JANTXV2N930UB | 制造商:Microsemi Corporation 功能描述:NPN TRANSISTOR (NPN) - Waffle Pack |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。